| PART |
Description |
Maker |
| HYS64T256022EDL HYS64T256022EDL-2.5-B HYS64T256022 |
200-Pin Dual Die Small-Outline-DDR2-SDRAM Modules
|
Qimonda AG
|
| HYS64T128020EDL-3-C HYS64T128020EDL-2.5-C HYS64T12 |
200-Pin SO-DIMM DDR2 SDRAM Modules 128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
200-Pin SO-DIMM DDR2 SDRAM Modules 128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200
200-Pin SO-DIMM DDR2 SDRAM Modules 128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200
200-Pin SO-DIMM DDR2 SDRAM Modules 256M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200
|
Qimonda AG
|
| HYS64D64020HBDL-6-C HYS64D64020GBDL-5-C HYS64D6402 |
200-Pin Small Outline Dual-In-Line Memory Modules
|
INFINEON[Infineon Technologies AG]
|
| HYS64D6402 HYS64D64020HDL-6-B HYS64D64020GDL HYS64 |
200-Pin Small Outline Dual-In-Line Memory Modules
|
INFINEON[Infineon Technologies AG]
|
| HYS64D64020HBDL-6-C |
200-Pin Small Outline Dual-In-Line Memory Modules
|
Qimonda AG
|
| HYS64T128020GU-5-A HYS64T64000HU-5-A HYS64T64000GU |
240-Pin Unbuffered DDR2 SDRAM Modules
240-Pin Unbuffered DDR2 SDRAM Modules 240针无缓冲DDR2 SDRAM内存模块
CAPACITOR-CERAMIC
|
Infineon Technologies A...
Infineon Technologies AG
|
| 78309-1130 78309-2215 78309-1730 78309-2230 78309- |
DDR/DDR2 SO DDM 200 CKTS. 5.2MM HEIGHT REVERSE ORIENTATION
|
Molex Electronics Ltd.
|
| BS108ZL1G |
Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
ON Semiconductor
|
| 10-08-1093 |
5.08mm (.200) Pitch KK? Header, Vertical, Round Pin, 9 Circuits, Tin (Sn) Plating, Pin Length 30.48mm (1.200)
5.08mm (.200") Pitch KK垄莽 Header, Vertical, Round Pin, 9 Circuits, Tin (Sn) Plating, Pin Length 30.48mm (1.200")
|
Molex Electronics Ltd.
|
| BCY79 BCY59 BCY78 |
200 mA, PNP, Si, SMALL SIGNAL TRANSISTOR
200 mA, NPN, Si, SMALL SIGNAL TRANSISTOR
|
|
| CMUT3906TR CMUT3904BK |
200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
CENTRAL SEMICONDUCTOR CORP
|
