PART |
Description |
Maker |
PTMB100B12 |
IGBT MODULE Six-Pack 100A 1200V
|
http:// NIEC[Nihon Inter Electronics Corporation]
|
MBN400GR12 |
IGBT Module Rated 400A/1200V, Single-pack type
|
HITACHI[Hitachi Semiconductor]
|
IRG7T50FF12E |
1200V 50A Ultra Fast IGBT 6-Pack (3-Phase Inverter) module packaged in POWIR ECO 2 package
|
International Rectifier
|
MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor Toshiba Corporation
|
MG800J2YS50A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
MDI550-12A4 MID550-12A4 |
1200V IGBT module IGBT Modules Short Circuit SOA Capability Square RBSOA IGBT Modules: Boost Configurated IGBT Modules
|
IXYS[IXYS Corporation]
|
MG600Q1US61 |
TOSHIBA IGBT Module Silicon N Channel IGBT GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
Toshiba Semiconductor
|
2MBI300NB-060 |
600V/300A 2-Pack IGBT
|
http:// FUJI ELECTRIC HOLDINGS CO., LTD.
|
IXGH32N60AU1S IXGH32N60AU1 |
HiPerFAST IGBT with Diode(VCES涓?00V锛?CE(sat)涓?.9V??iPerFAST缁????????浣??(甯?????锛? HiPerFAST IGBT with Diode Combi Pack
|
IXYS[IXYS Corporation]
|
IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五(巴西)直| 9A条(丁) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五(巴西)国际消费电子展| 50A条一(c
|
IXYS, Corp.
|