| PART |
Description |
Maker |
| BWL-2B1R01-H1 |
1W AlGaInP Red Low power consumption.
|
BRIGHT LED ELECTRONICS CORP
|
| BL-BF43V1 |
Single High Speed CMOS Timer, 8L PDIP 发光二极管铝镓铟砷化镓超级红低电流的要求
LED AlGaInP/GaAs Super Red Low current requirement.
|
Bright LED Electronics, Corp.
Bright LED Electronics Corp.
|
| BL-BF43V4V-2 |
10mV Dual N-Channel Matched MOSFET Pair, Enhancement Mode, 8L CDIP
LED AlGaInP/GaAs Super Red Low current requirement.
|
Bright LED Electronics Corp.
|
| BL-BF43R4V |
24 bit Serial Digital Controller for ALD500R w/ LCD Display Interface, 28L SOIC
LED AlGaInP/GaAs Super Red Low current requirement.
|
Bright LED Electronics Corp.
|
| DL-4038-025 |
High Power AlGaInP Laser Diode(大功率AlGaInP激光二极管)
Red Laser Diode High Power AlGaInP Laser Diode
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| BL-BKG3J7M |
LED AlGaInP/GaAs Super Yellow Low current requirement.
|
BRIGHT LED ELECTRONICS CORP
|
| BL-BJ73V4V-2 |
LED AlGaInP/GaAs uper Orange Low current requirement.
|
BRIGHT LED ELECTRONICS CORP
|
| BL-BK83V4V-3 |
LED AlGaInP/GaAs Super Yellow Low current requirement.
|
BRIGHT LED ELECTRONICS CORP
|
| BL-BJ23J7M |
LED AlGaInP/GaAs Super Orange Low current requirement.
|
Bright LED Electronics Corp.
|
| DL-3038-011 |
Red Laser Diode Index Guided AlGaInP Laser Diode
|
SANYO
|
| APT10035B2LL APT10035LLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 1000V 28A 0.350 Ohm
LED Lamp; Color:Red/Red; Leaded Process Compatible:Yes
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
http://
Advanced Power Technology Ltd.
|
| BL-BJH3V1 |
Quad N-Channel Programmable Matched Pair MOSFET Array, 16L CDIP, EPAD Enabled
LED AlGaInP/GaAs Super Orange Low current requirement.
|
Bright LED Electronics Corp.
|
