PART |
Description |
Maker |
IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us. High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
IRS23364DJTRPBF |
High voltage, high speed power MOSFET and IGBT driver for 3-phase applications
|
International Rectifier
|
IX2127 IX2127G IX2127N IX2127NTR |
High-Voltage Power MOSFET & IGBT Driver
|
Clare, Inc.
|
IX212711 IX2127N |
High-Voltage Power MOSFET & IGBT Driver High-Voltage Power MOSFET & IGBT Driver
|
Clare, Inc.
|
OM9403SD |
25V 8A Single Channel Hi-Rel IGBT Gate Driver in a DP-10A package IGBT GATE DRIVER For Driving IGBT Modules 600V and 1200V, 150A to 600A
|
IRF[International Rectifier]
|
SGH80N60UFD SGH80N60UFDTU |
Discrete, High Performance IGBT with Diode Ultrafast IGBT 240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness 80 A, 600 V, N-CHANNEL IGBT
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp.
|
MP4412 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
|
TOSHIBA
|
MG75J1ZS40 E002382 |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) Silicon N channel IGBT(N沟道绝缘栅双极型晶体 N通道IGBT的(不适用沟道绝缘栅双极型晶体管) N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) From old datasheet system
|
Toshiba, Corp. TOSHIBA[Toshiba Semiconductor]
|
1SD210FI-FZ600R65KF1 FZ600R65KF1 |
SCALE High Voltage IGBT Driver
|
List of Unclassifed Manufacturers ETC
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