| PART |
Description |
Maker |
| SPLMY81X2 |
Passively Cooled Diode Laser Bar, 35 W cw at 808 nm
|
OSRAM GmbH
|
| SPLMN81X2 |
808 nm, LASER DIODE
Passively Cooled Diode Laser Bar, 40 W cw at 808 nm
|
OSRAM GmbH
|
| SPLLG81-P |
Passiv gekuhlter SIRILAS Diodenlaser 15 W cw bei 808nm Conductively cooled SIRILAS? Laser Diode Array 15 W cw at 808nm
Passiv gekuhlter SIRILAS Diodenlaser 15 W cw bei 808nm Conductively cooled SIRILAS㈢ Laser Diode Array 15 W cw at 808nm
|
OSRAM GmbH
|
| LSC4110 LSC4110-BI LSC4110-D4 LSC4110-DN LSC4110-F |
1 mW 14 Pin DIL Cooled Laser Modules 1毫瓦14针迪勒冷激光模
|
Silicon Laboratories, Inc.
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
http://
Agilent(Hewlett-Packard...
|
| NX7335AN-AA NX7335BN-AA |
LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE WITH MONITOR PD FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX7363JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX7437 |
LASER DIODE 1 490 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6410GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| NX6411GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| NX8349XK NX8349YK NX8349TS |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
