| PART |
Description |
Maker |
| SPLMY81X2 |
Passively Cooled Diode Laser Bar, 35 W cw at 808 nm
|
OSRAM GmbH
|
| SPLMY81S9 |
Passively Cooled Diode Laser Bar, 140 W cw at 808 nm
|
OSRAM GmbH
|
| C484 |
(C48x) 2.5 G-Bits Cooled Laser Transmitters
|
Agere Systems
|
| SLD323V SLD323V-21 SLD323V-24 |
807 nm, LASER DIODE
798 nm, LASER DIODE
High Power Density 1W Laser Diode
|
SONY
|
| 2211-30SL 2211-20SL 2214-25ML 2214-40ML 2214-4VL 2 |
Air-Cooled Argon-Ion Laser Heads in Cylindrical and Rectangular Packages
|
JDS Uniphase Corporation
|
| NDL7910PC NDL7603P NDL7910P |
InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION
1 550 nm OPTICAL FIBER COMMUNICATIONS EA MODULATOR INTEGRATED MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH APPLICATIONS
Optical Fiber Communication Laser Diode(光纤通信激光二极管)
|
NEC[NEC]
NEC Corp.
|
| NX6350EP27-AZ |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
|
California Eastern Labs
|
| NX6511GH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
| NX8346TB |
LASER DIODE 1310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
| SLD105UL |
Low Power GaAIAs Laser Diode(低功耗镓铝砷激光二极管)
GaAlAs Laser Diode
|
SONY[Sony Corporation]
|
