| PART |
Description |
Maker |
| SFH420 SFH425 Q62702-P0330 Q62702-P1690 |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
GaAs-IR-Lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| SFH4000 |
Schnelle IR-Lumineszenzdiode High Speed Infrared Emitter
|
OSRAM GmbH
|
| SFH4811 SFH4813 |
IR-Lumineszenzdiode (950 nm) im TO-46-Geh?se Infrared Emitter (950 nm) in TO-46 Package Lead (Pb) Free Product - RoHS Compliant
IR-Lumineszenzdiode (950 nm) im TO-46-Geh漉se Infrared Emitter (950 nm) in TO-46 Package Lead (Pb) Free Product - RoHS Compliant
|
OSRAM GmbH
|
| SFH4500 SFH4505 |
Leistungsstarke IR-Lumineszenzdiode High Power Infrared Emitter Lead (Pb) Free Product - RoHS Compliant
|
OSRAM GmbH
|
| SFH4505 |
(SFH4500 / SFH4505) Schnelle IR-Lumineszenzdiode (950 nm) im SMR-Gehuse High-Speed Infrared Emitter (950 nm)
|
Infineon Technologies AG
|
| SFH464E7800 SFH464 Q62702-Q1745 |
GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm 发动器，Lumineszenzdiode 660纳米发光二极管的GaAIAs 660纳米
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SFH7221 SFH7221-Z |
GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor
|
OSA Opto Light GmbH
OSRAM GmbH
|
| LD271LH LD271 LD271H LD271L |
INFRARD EMITTER
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
|
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| Q65110A2464 Q65110A2975 |
IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung
|
OSRAM GmbH
|
