PART |
Description |
Maker |
P2750 P2750-06 P2750-08 P3257-30 P3257-31 P3981 P3 |
0.2mW; allowable current:6mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation 0.2mW; allowable current:3mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation 0.2mW; allowable current:50mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation
|
Hamamatsu Corporation
|
C4159 |
Low noise amplifier for InGaAs, PbS, PbSe and MCT detector
|
Hamamatsu Corporation
|
P9696 |
PbSe photoconductive detector
|
Hamamatsu Corporation
|
VTL5C2/2 VTL5C4/2 VTL5C3/2 VT935G |
Photoconductive Cells and Analog Optoisolators (Vactrols) Photoconductive cell. Group A, B, C.
|
PerkinElmer Optoelectronics
|
IP2030 |
30V MCT/IGBT Gate Driver(MOS???纭??浣??/缁????????浣???ㄩ┍?ㄥ?)
|
Intersil Corporation
|
P1241-04 P1241-05 P1241-06 P1444 P687-02 P1201-04 |
CdS photoconductive cell
|
Hamamatsu Photonics HAMAMATSU[Hamamatsu Corporation]
|
PDV-P9001 |
CdS Photoconductive Photocells
|
Advanced Photonix, Inc.
|
PDV-P8001 |
CdS Photoconductive Photocells
|
Advanced Photonix, Inc.
|
PDV-P8104 |
CdS Photoconductive Photocells
|
Advanced Photonix, Inc.
|
PDV-P5003 |
CdS Photoconductive Photocells
|
Advanced Photonix, Inc.
|
PDV-P5002 |
CdS Photoconductive Photocells
|
Advanced Photonix, Inc.
|