PART |
Description |
Maker |
MRFG35010MT1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
MRFG35005ANT1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
MRFG35003M6T1 MRFG35003M6T106 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
MRFG35010AR1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
MRFG35003MT1 |
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc.
|
DGSK32-018CS DGS15-018CS |
Gallium Arsenide Schottky Rectifier Second generation Gallium Arsenide Schottky Rectifier Second generation 24 A, 180 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-252AA
|
IXYS[IXYS Corporation] IXYS, Corp.
|
PSA08-11EWA |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
KINGBRIGHT[Kingbright Corporation]
|
GN04005 |
Gallium Arsenide Devices
|
Panasonic
|
GN01021 |
Gallium Arsenide Devices
|
Panasonic
|
GN04054N |
Gallium Arsenide Devices
|
Panasonic
|