PART |
Description |
Maker |
MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor Toshiba Corporation
|
GT40Q32306 GT40Q323 |
Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
|
Toshiba Semiconductor
|
RJH60D0DPM RJH60D0DPM-00-T1 |
Silicon N Channel IGBT Application: Inverter 45 A, 600 V, N-CHANNEL IGBT
|
Renesas Electronics Corporation
|
MBN400C33A |
IGBT Module / Silicon N Channel IGBT Silicon N-channel IGBT
|
HITACHI[Hitachi Semiconductor]
|
IXGH16N170A |
High Voltage IGBT 16 A, 1700 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp.
|
IXSX35N120AU1 |
High Voltage IGBT with Diode(VCES200V,VCE(sat)4V的高电压绝缘栅双极晶体管(带二极管 70 A, 1200 V, N-CHANNEL IGBT, TO-247
|
IXYS, Corp. IXYS[IXYS Corporation]
|
MIG25Q906H MIG25Q906HA |
Integrated IGBT Module Silicon N-Channel IGBT
|
Toshiba
|
GT40G121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
IXGT40N60B2 IXGH40N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT 75 A, 600 V, N-CHANNEL IGBT, TO-268AA HiPerFAST IGBT
|
IXYS Corporation
|