| PART |
Description |
Maker |
| IMN10 |
Switching Diode Ultra high speed switching High reliability.
|
Rohm
|
| GBAV152 |
The GBAV152 is designed for ultra high speed switching application
SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD
GTM CORPORATION
|
| KTK5131S |
SMOS FET/ Analog Switch Application
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH)
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING ANALOG SWITCH)
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| 1SS352TPH3 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| 1SS30207 1SS302-07 |
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| 1SS196 |
ULTRA HIGH SPEED SWITCHING APPLICATION
|
Guangdong Kexin Industrial Co.,Ltd
|
| 1SS30807 |
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| 1SS19007 1SS190 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| 1SS308 |
Ultra High Speed Switching Applications
|
Guangdong Kexin Industrial Co.,Ltd
|
| HN4D01JU-14 |
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
