| PART |
Description |
Maker |
| IS61C256AH IS61C256AH-12J IS61C256AH-12N IS61C256A |
32K x 8 HIGH-SPEED CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| IS61C256AL-12TL IS61C256AL-12TLI |
32K x 8 HIGH-SPEED CMOS STATIC RAM
|
Integrated Silicon Solution, Inc.
|
| IS61WV3216BLL |
(IS61WV3216BLL / IS64WV3216BLL) 32K x 16 HIGH-SPEED CMOS STATIC RAM
|
ISSI
|
| IDT70V07L55G IDT70V07S55G IDT70V07L55PF |
400V N-Channel MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 32K X 8 DUAL-PORT SRAM, 55 ns, CPGA68
HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM 32K X 8 DUAL-PORT SRAM, 55 ns, CPGA68
HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM 32K X 8 DUAL-PORT SRAM, 55 ns, PQFP80
|
Integrated Device Technology, Inc.
|
| WS57C256F WS57C256F-35 WS57C256F-35C WS57C256F-35D |
-WS57C256F MILITARY HIGH SPEED 32K X 8 CMOS EPROM
32K X 8 OTPROM, 55 ns, PDIP28
HIGH SPEED 32K x 8 CMOS EPROM 高2K的8的CMOS存储
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| W24258S-70LE W24258S-70LI W24258-70LE W24258-70LI |
32K X 8 CMOS STATIC RAM 32K X 8 STANDARD SRAM, 100 ns, PDSO28
From old datasheet system
32K ′ 8 CMOS STATIC RAM
|
Winbond Electronics, Corp.
WINBOND[Winbond]
|
| IDT70V658S15DR IDT70V657S10DRI IDT70V657S15DRI IDT |
Dual N-Channel Digital FET
HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM 高.3 128/64/32K × 36 ASYNCHRONO美国双端口静态RAM
HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM 32K X 36 DUAL-PORT SRAM, 10 ns, PQFP208
HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM 32K X 36 DUAL-PORT SRAM, 15 ns, PQFP208
|
Integrated Device Technology, Inc.
|
| KM68257E KM68257E-10 KM68257E-12 KM68257E-15 KM682 |
32Kx8 bit high-speed CMOS static RAM (5V operating), 15ns
32Kx8 bit high-speed CMOS static RAM (5V operating), 10ns
32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges. 32Kx8位高速CMOS静态RAMV的工作），在商业和工业温度范围操作
32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| AT27BV256-90TI AT27BV256 AT27BV256-12JC AT27BV256- |
High Speed CMOS Logic Dual 4-Stage Binary Counters 14-SOIC -55 to 125 32K X 8 OTPROM, 150 ns, PDSO28
High Speed CMOS Logic Dual 4-Input NOR Gates 14-SOIC -55 to 125
High Speed CMOS Logic Dual Decade Ripple Counters 16-SOIC -55 to 125
High Speed CMOS Logic Dual 4-Input NOR Gates 14-PDIP -55 to 125
256K 32K x 8 Unregulated Battery-Voltage High Speed OTP CMOS EPROM
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| W24258S-70LL W24258-70LL W24258Q-55LL W24258Q-70LL |
32K X 8 CMOS STATIC RAM 32K X 8 STANDARD SRAM, 70 ns, PDSO28
32K X 8 CMOS STATIC RAM 32K X 8 STANDARD SRAM, 55 ns, PDSO28
From old datasheet system
32K ′ 8 CMOS STATIC RAM
|
Winbond Electronics, Corp.
WINBOND[Winbond]
|
