| PART |
Description |
Maker |
| STB25NM60N STB25NM60N-1 STB25NM60NT4 STF25NM60N ST |
N-CHANNEL 650 @Tjmax-0.140&-20A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET
|
ST Microelectronics
|
| FCB20N60F |
N-Channel SuperFETFRFETMOSFET 600V, 20A, 190m
|
Fairchild Semiconductor
|
| 20N60 20N60G-T3P-T 20N60G-T47-T 20N60L-T3P-T |
20A, 600V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| STGP20NB60H |
N-CHANNEL 20A - 600V TO-220 POWERMESH IGBT
|
ST Microelectronics
|
| STGW20NB60K 7188 |
N-CHANNEL 20A - 600V - TO-220/TO-247 POWERMESH IGBT
From old datasheet system
|
STMicroelectronics
|
| FCB20N60F12 |
600V N-Channe MOSFET 600V, 20A, 190mΩ
|
Fairchild Semiconductor
|
| STB20NM60-1 STB20NM60T4 STP20NM60 STP20NM60FP |
N-CHANNEL 600V - 0.25 OHM - 20A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFET
|
ST Microelectronics
|
| IRG4BC40W IRG4BC40W-S |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)
|
IRF[International Rectifier]
|
| 6MBI20L-060 |
IGBT(600V 20A) 20 A, 600 V, N-CHANNEL IGBT
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| RF3S49092SM F3S49092 |
20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| AOT20S60L |
600V 20A a MOS
|
Alpha & Omega Semicondu...
|
