| PART |
Description |
Maker |
| ITT2205AF |
3.6V 0.5W RF Power Amplifier IC for DECT
|
M/A-COM / Tyco Electronics
|
| PBL40309 |
3.6 V Differential Power Amplifier for DECT Telecommunications system
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| MA02206GJ_1 MA02206GJ MA02206GJ1 |
3.6 V, 0.5 W, RF Power Amplifier IC for DECT, 1800 - 2000 MHz
|
MACOM[Tyco Electronics]
|
| CGY2032BTS CGY2032BTS_2 |
DECT 500 mW power amplifier
From old datasheet system
|
Philips
|
| TQP9218 |
1805 - 1880 MHz, 0.25 Watt, High Linearity Small Cell Power Amplifier
|
Qorvo
|
| BFP136 BFP136W Q62702-F1575 |
From old datasheet system
NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems)
|
SIEMENS[Siemens Semiconductor Group]
|
| BGF1801-10 |
GSM1800 EDGE power module 1805 MHz - 1880 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| CGY196 |
GaAs MMIC (Broadband Power Amplifier [ 800..3500 Mhz ] DECT,PHS,PCS,GSM,AMPS,WLAN,WLL Single Voltage Supply)
GaAs MMIC (Broadband Power Amplifier [ 800..3500 Mhz ] DECT/PHS/PCS/GSM/AMPS/WLAN/WLL Single Voltage Supply)
From old datasheet system
|
Siemens Semiconductor Group
Infineon
|
| T2802NBSP T2802 |
2.5 GHz DECT transceiver IC with integrated VCO
2.4-GHz DECT Non-Blind-Slot RF Transceiver
|
Atmel Corp
|
| PTFA181001GL09 |
Thermally-Enhanced High Power RF LDMOS FET 100 W, 1805-1880 MHz
|
Infineon Technologies AG
|
