| PART |
Description |
Maker |
| APT64GA90LD30 |
Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-264; BV(CES) (V): 900; VCE(sat) (V): 3.1; IC (A): 64; 117 A, 900 V, N-CHANNEL IGBT, TO-264AA
|
Microsemi, Corp.
|
| TPC8005-H |
CONNECTOR ACCESSORY
Silicon N Channel MOS Type (High Speed U−MOS)
Silicon N Channel MOS Type (High Speed U-MOS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SK3236 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)
From old datasheet system
Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Switching Regulator Applications, DC-DC Converter and Motor Drive Applications
|
Toshiba Semiconductor
Hitachi Semiconductor
|
| SSM3J01T |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
| 2SJ353 2SJ353-T D11216EJ1V0DS00 |
From old datasheet system
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
P-channel MOS-type silicon field effect transistor (-60
|
NEC[NEC]
|
| 2SK3563 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS) 东芝场效应晶体管频道马鞍山类型（饼马鞍山？）
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS?)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS4)
|
Toshiba, Corp.
Toshiba Semiconductor
|
| SSM5N05FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| TPCP830208 |
Silicon P Channel MOS Type (U-MOS?
Silicon P Channel MOS Type (U-MOS楼鲁)
|
Toshiba Semiconductor
|
| MP6801 |
Power MOS FET Module Silicon N / P Channel MOS Type
TOSHIBA POWER MOS FET MODULE SILICON & P CHANNEL MOS TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| TPCF8102 |
Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
