| PART |
Description |
Maker |
| AD8622ARZ AD8624ARUZ |
Dual, Low Power, Low Noise, Low Bias Current, Precision Rail-to-Rail Output Op Amp; Package: 8-pin; Temperature Range: -40°C to 125°C DUAL OP-AMP, 230 uV OFFSET-MAX, 0.58 MHz BAND WIDTH, PDSO8
QUAD OP-AMP, 230 uV OFFSET-MAX, 0.6 MHz BAND WIDTH, PDSO14
|
Analog Devices, Inc.
ANALOG DEVICES INC
|
| MS1337 |
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 30; P(in) (W): 3; Gain (dB): 10; Vcc (V): 12.5; Cob (pF): 120; fO (MHz): 0; Case Style: M113 VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| MS1329 |
RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 60; P(in) (W): 12; Gain (dB): 7; Vcc (V): 28; Cob (pF): 80; Case Style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
Microsemi, Corp.
|
| HMC816LP4E |
SMT GaAs PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz
|
Hittite Microwave Corporation
|
| HMC816LP4E10 |
SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
| PTF181301 PTF181301A |
LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz LDMOS射频功率场效应晶体管130瓦，1805年至1880年兆
LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz
|
INFINEON[Infineon Technologies AG]
|
| MRF374A |
MRF374A 470-860 MHz, 130 W, 32 V Lateral N-Channel Broadband RF Power MOSFET
RF POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc
Motorola Inc
|
| MRF9130L |
MRF9130L, MRF9130LR3, MRF9130LSR3 GSM/EDGE 921-960 MHz, 130 W, 28 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| SF1102B |
230 MHz SAW Filter
|
RFM[RF Monolithics, Inc]
|
| APT6013JFLL |
POWER MOS 7 600V 39A 0.130 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
