| PART |
Description |
Maker |
| XC73144-15 XC73144-12 XC73144-10 XC73144-7 XC73144 |
144-Macrocell CMOS EPLD
|
Xilinx, Inc
|
| XC7336-7 XC7336-10 XC7336-12 XC7336-15 XC7336-5 XC |
Ultra high-performance EPLD
36-Macrocell CMOS EPLD
|
XILINX[Xilinx, Inc]
Xilinx, Inc.
|
| V29C51002B-55J V29C51002T-55T V29C51002B-55T V29C5 |
2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY 2兆位262,144 × 85伏的CMOS闪存
2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY 2兆位262,144 × 8伏的CMOS闪存
|
Mosel Vitelic, Corp.
|
| CY7C34405 CY7C344-25PC_PI CY7C344-25HC_HI CY7C344- |
32-Macrocell MAX? EPLD
32-Macrocell MAX庐 EPLD
|
Cypress Semiconductor
|
| CY7C346-35RMB CY7C346-35RC CY7C346-35JI CY7C346-35 |
ECONOLINE: RSZ/P - 1kVDC & 2kVDC Isolation- UL94V-0 Package Material- No Heatsink Required- No Extern. Components Required- Toroidal Magnetics- ContinuousShort Circuit Protection ( /P-Suffix)
USE ULTRA37000TM FOR ALL NEW DESIGNS(128-Macrocell MAX EPLD)
USE ULTRA37000TM FOR ALL NEW DESIGNS(128-Macrocell MAX EPLD) OT PLD, 75 ns, PQFP100
ECONOLINE: RSZ/P - 1kVDC OT PLD, 75 ns, PQFP100
ECONOLINE: RSZ/P - 1kVDC UV PLD, 75 ns, CPGA100
USE ULTRA37000TM FOR ALL NEW DESIGNS(128-Macrocell MAX EPLD) OT PLD, 52 ns, PQCC84
USE ULTRA37000TM FOR ALL NEW DESIGNS(128-Macrocell MAX EPLD) 使用ULTRA37000TM的所有新设计28宏单元最大可编程逻辑器件
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C342 CY7C342-25 CY7C342-30 CY7C342-35 CY7C342B |
128-Macrocell MAX EPLDs 128宏单元最EPLDs
128-Macrocell MAX EPLDs OT PLD, 40 ns, PQCC68
128-Macrocell MAX EPLDs OT PLD, 25 ns, PQCC68
128-Macrocell MAX EPLDs UV PLD, 40 ns, CQCC68
ECONOLINE: RSZ/P - 1kVDC & 2kVDC Isolation- UL94V-0 Package Material- No Heatsink Required- No Extern. Components Required- Toroidal Magnetics- ContinuousShort Circuit Protection ( /P-Suffix)
128-Macrocell MAX® EPLD
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| HM514260AJ-10 HM514260AJ-8 HM514260ALJ-7 HM514260A |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
262, 144-Word x 16-Bit Dynamic Random Access Memory
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
HITACHI[Hitachi Semiconductor]
ITT, Corp.
|
| CY7C341B CY7C341B-25HC_HI CY7C341B-25JC_JI CY7C341 |
Programmable Logic : Programmable Logic Devices
192-Macrocell MAX® EPLD
192-Macrocell MAX EPLD
|
Cypress Semiconductor Corp.
|
| M57715 M57715R 57715R |
144-148MHz 12.5V /13W /FM MOBILE RADIO
144-148MHz 12.5V,13W,FM MOBILE RADIO
144-148MHZ, 12.5V, 13W, FM MOBILE RADIO
144-148MHz 12.5V13WFM MOBILE RADIO
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MB8502E064AA-60L B8502E064AA-70 |
144-PIN SO DIMM 2 M×64 BITS
Hyper Page Mode Dram Module(CMOS 2 M×64 位超级页面存取模式动态RAM模块)
144-PIN SO DIMM 2 M?64 BITS Hyper Page Mode Dram Module(CMOS 2 M?64 浣??绾ч〉?㈠???ā寮????AM妯″?)
|
Fujitsu Limited
|
| TC55VZM216AJJN12 TC55VZM216A TC55VZM216AFTN08 TC55 |
262,144-WORD BY 16-BIT CMOS STATIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
