| PART |
Description |
Maker |
| MIE-534H4 534H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| MIE-514L3 514L3 |
GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE 发动器的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| HE8404SG_06 HE8404SG06 |
GaAlAs Infrared Emitting Diode
|
OPNEXT[Opnext. Inc.]
|
| KLB-16AI-94 |
Infrared Emitting Diode(GaAlAs)
|
KODENSHI KOREA CORP.
|
| TSHA5503 TSHA5502 TSHA5501 TSHA5500 TSHA550 |
GaAlAs Infrared Emitting Diodes in 5 mm (T-13/4) Package 红外发光二极管的GaAIAs在？5毫米（翻 13 / 4）包
From old datasheet system
GaAlAs Infrared Emitting Diodes in 5 mm (T-13/4) Package
|
Vishay Intertechnology, Inc.
TFUNK[Vishay Telefunken]
|
| OPE5594S |
The OPE5594S is GaAlAs infrared emitting diode
|
Roithner LaserTechnik G...
|
| LTE-2871 |
Gaalas T-1 3/4 Modified Infrared Emitting Diode
|
Lite-On Technology
|
| LNA4401L |
GaAlAs Infrared Light Emitting Diode
|
PANASONIC[Panasonic Semiconductor]
|
| LN77L |
GaAlAs Infrared Light Emitting Diode
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| TSHA550009 |
Infrared Emitting Diode, 875 nm, GaAlAs
|
Vishay Siliconix
|
| LN175 |
GaAlAs Infrared Light Emitting Diode
|
PANASONIC[Panasonic Semiconductor]
|
| LN172 |
GaAlAs Infrared Light Emitting Diode
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
