| PART |
Description |
Maker |
| UPG2214TB-E4-A |
50 MHz - 3000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 0.65 dB INSERTION LOSS
2-WIRE FACTORY PROGRAMMED W/TIN PLATING
NECs W LOW VOLTAGE L/ S-BAND SPDT SWITCH
NECs ?W LOW VOLTAGE L, S-BAND SPDT SWITCH
|
NEC Corp.
|
| UPG2179TB UPG2179TB-E4-A |
NECs 1.5W L, S-BAND SPDT SWITCH
NECs 1.5W L/ S-BAND SPDT SWITCH
|
NEC Corp.
NEC[NEC]
|
| NE6510179A-A NE6510179A-T1 |
NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET
|
Duracell
California Eastern Laboratories
|
| NE5520379A-T1A-A NE5520379A |
NECS 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET
|
California Eastern Labs
|
| UPG2027TQ UPG2027TQ-E1-A |
NECs L-BAND 4W HIGH POWER SPDT SWITCH IC
|
NEC
|
| NE552R479A-T1A-A NE552R479A |
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET
|
CEL[California Eastern Labs]
|
| NE3503M04-T2-A NE3503M04-A |
PC 3C 3#16 PIN RECP
NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET 邻舍C至超级Ku波段低噪声和高增益放大器 - CHANNER黄建忠场效应
|
California Eastern Laboratories, Inc.
|
| UPC1688 UPC1688G-TI UPC1688G-T1-A |
NECs 1.0 GHz BANDWIDTH SILICON MMIC AMPLIFIER 邻舍1.0 GHz的带宽硅MMIC放大
100 MHz - 700 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 39, SOT-143, 4 PIN
|
NEC, Corp.
Duracell
NEC[NEC]
|
| UPG2118K-E3 |
800 MHz - 2500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 4.15 X 4.15 MM, 0.90 MM HEIGHT, QFN-20
NECs 1.5W GaAs MMIC POWER AMPLIFIER
|
California Eastern Laboratories
NJR
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| M464S1724DTS-C1H M464S1724DTS-L7C M464S1724DTS M46 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新，3.3V的同步DRAM的社民党
16Mx64 SDRAM SODIMM based on 8Mx16 / 4Banks /4K Refresh / 3.3V Synchronous DRAMs with SPD
16Mx64 SDRAM SODIMM based on 8Mx164Banks4K Refresh3.3V Synchronous DRAMs with SPD
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| NR8500 NR8500FR-BB-AZ NR8500FR-CB-AZ NR8500CP-BC-A |
CAP 1.0PF 25V .10 PF NP0(C0G) SMD-0603 TR-7 PLATED-NI/SN
NECs 050 um InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS 邻舍050微米铟镓APD的同轴包55字节/秒和622 Mb / s的应
NECs 050 um InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS 邻舍050微米铟镓砷APD的同轴包55字节/秒和622 Mb / s的应
NECs φ50 μm InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
|
California Eastern Laboratories, Inc.
California Eastern Labs
|
| LQP03TN12NJ04 AN26032A LQP03TN8N2H04 GRM33B30J104K |
Ultra small , Single Band LNA-IC with Band-limiting filter for 600 MHz Band Applications
|
Panasonic Battery Group
|
