| PART |
Description |
Maker |
| UPD44165082F5-E60-EQ1 UPD44165182F5-E60-EQ1 UPD441 |
18M-BIT QDRII SRAM 2-WORD BURST OPERATION 1800万位推出QDRII SRAM字爆发运
|
NEC Corp.
NEC, Corp.
|
| UPD44164082F5-E50-EQ1 UPD44164362F5-E50-EQ1 UPD441 |
18M-BIT DDRII SRAM 2-WORD BURST OPERATION 1800万位的SRAM 2条DDRII字爆发运
2M X 8 DDR SRAM, 0.45 ns, PBGA165
|
NEC, Corp.
|
| UPD44325082 UPD44325082F5-E50-EQ2 UPD44325092F5-E5 |
36M-BIT QDRII SRAM 2-WORD BURST OPERATION
|
NEC Corp.
|
| CY7C1263V18-300BZI |
36-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| MT54W4MH9B MT54W4MH8B MT54W1MH36B-5 MT54W1MH36B-7. |
36Mb QDRII SRAM 2-WORD BURST
36Mb QDR⑩II SRAM 2-WORD BURST ⑩分6MB四年防务审查II SRAM字爆
36Mb QDR?┥I SRAM 2-WORD BURST
|
Micron Technology, Inc.
|
| CY7C1411AV18-200BZI CY7C1411AV18-250BZI CY7C1411AV |
36-Mbit QDRII SRAM 4-Word Burst Architecture 2M X 18 QDR SRAM, 0.45 ns, PBGA165
36-Mbit QDRII SRAM 4-Word Burst Architecture 1M X 36 QDR SRAM, 0.45 ns, PBGA165
36-Mbit QDRII SRAM 4-Word Burst Architecture 2M X 18 QDR SRAM, 0.5 ns, PBGA165
36-Mbit QDRII SRAM 4-Word Burst Architecture 4M X 8 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C2263KV18-450BZXI CY7C2263KV18-550BZXI CY7C2265 |
36-Mbit QDRII SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
|
Cypress
|
| CY7C2245KV18-450BZXI |
36-Mbit QDRII SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) with ODT
|
Cypress
|
| CY7C1563XV18-633BZXC CY7C1565XV18-633BZXC |
72-Mbit QDRII Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress
|
| CY7C2262XV18 CY7C2264XV18 CY7C2262XV18-366BZXC |
36-Mbit QDRII Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
36-Mbit QDR? II Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
|
Cypress Semiconductor
|
