| PART |
Description |
Maker |
| UPD44164365F5-E60-EQ1 UPD44164085 UPD44164085F5-E4 |
18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION
|
NEC[NEC]
|
| UPD44165084 UPD44165084F5-E60-EQ1 UPD44165364F5-E6 |
18M-BIT QDRII SRAM 4-WORD BURST OPERATION 1800万位推出QDRII SRAM4个字爆发运作
18M-BIT QDRII SRAM 4-WORD BURST OPERATION 1800万位推出QDRII SRAM个字爆发运作
|
NEC Corp.
NEC, Corp.
|
| UPD44324364F5-E50-EQ2 UPD44324084 UPD44324084F5-E3 |
36M-BIT DDRII SRAM 4-WORD BURST OPERAT
|
NEC[NEC]
|
| UPD44324085F5-E50-EQ2 UPD44324365F5-E50-EQ2 UPD443 |
36M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION
|
NEC[NEC]
|
| R1Q5A3618B R1Q5A3618BBG-33R R1Q5A3618BBG-40R R1Q5A |
36-Mbit DDRII SRAM 4-word Burst
|
Renesas Electronics Corporation
|
| R1QLA3636CBB |
36-Mbit DDRII SRAM 2-word Burst
36-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation
|
| M6MGB331S8AKT M6MGT331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| MR27V852D |
524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
From old datasheet system
|
OKI
|
| MSM27C852CZ MSC27C852CZ MSM27C8B52CZ |
524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
From old datasheet system
|
OKI electronic components
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
|
| UPD4416016G5-A15-9JF UPD4416016G5-A17-9JF UPD44160 |
1M X 16 STANDARD SRAM, 15 ns, PDSO54
CONNECTOR ACCESSORY
16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT
|
NEC Corp.
NEC[NEC]
|
| K7K1636T2C K7K1618T2C K7K1618T2C-EI330 K7K1618T2C- |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
1M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Samsung semiconductor
|
