| PART |
Description |
Maker |
| U635H256S2K25G1 U635H256 U635H256S2C25G1 |
PowerStore 32K x 8 nvSRAM
|
SIMTEK[Simtek Corporation]
|
| X28HC256P-12 X28HC256P-15 X28HC256J-90 X28HC256S-1 |
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 150 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 120 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CQCC32
SWITCH SLIDE 2MM HORIZONTAL SMD 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDIP28
RACK DESK SOLID BLACK 1.75X19X8,1 32K X 8 EEPROM 5V, 70 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CPGA28
Continuity Tester RoHS Compliant: NA 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDFP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CQCC32
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 1000uF; Voltage: 50V; Case Size: 12.5x25 mm; Packaging: Bulk
|
Intersil, Corp.
Intersil Corporation
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| CY7C4281V CY7C4261V-15JC CY7C4261V-15JI CY7C4281V- |
CONNECTOR ACCESSORY 16K X 9 OTHER FIFO, 10 ns, PQCC32
Power Resistor; Series:MK; Resistance:50Mohm; Resistance Tolerance: /- 1 %; Power Rating:0.75W; Voltage Rating:400V; Temperature Coefficient: /-50 ppm; Mounting Type:Through Hole; Operating Temp. Min:0 C 16K X 9 OTHER FIFO, 8 ns, PQCC32
16K/32K/64K/128K x 9 Low-Voltage Deep Sync FIFOs 128K X 9 OTHER FIFO, 15 ns, PQCC32
16K/32K/64K/128K x 9 Low-Voltage Deep Sync\TM FIFOs
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| UL631H256SK45G1 UL631H256 UL631H256S2C35 UL631H256 |
Low Voltage SoftStore 32K x 8 nvSRAM
|
List of Unclassifed Man...
ETC[ETC]
List of Unclassifed Manufacturers
|
| AT27LV256A-55JI AT27LV256A-55JU AT27LV256A-55RI AT |
256K (32K x 8) Low-voltage OTP EPROM
|
ATMEL Corporation
|
| BS62LV2565 BS62LV2565DC BS62LV2565DI BS62LV2565JC |
Very Low Power/Voltage CMOS SRAM 32K X 8 bit
|
Brilliance Semiconducto...
BSI[Brilliance Semiconductor]
|
| WS62256LLFP WS62256LLP WS62256 |
Very Low Power / Voltage CMOS SRAM 32K X 8bit
|
WINGS[Wing Shing Computer Components]
|
| BS62LV256S BS62LV256TC BS62LV256SC BS62LV256TI BS6 |
Very Low Power/Voltage CMOS SRAM 32K X 8 bit
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| 27LV256 11024E |
256K (32K x 8) Low-Voltage CMOS EPROM
From old datasheet system
|
Microchip
|
| CY7C4265V CY7C4275V CY7C4255V CY7C4285V 7C4285V |
32K/64Kx18 Low Voltage Deep Sync FIFOs
From old datasheet system
|
Cypress
|
