| PART |
Description |
Maker |
| U1JU44 |
TOSHIBA SUPER FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| SW08CXC300 SW12CXC300 SW58CXC620 SW42CXC680 SW30CX |
650 A, 800 V, SILICON, RECTIFIER DIODE
650 A, 1200 V, SILICON, RECTIFIER DIODE
1520 A, 5800 V, SILICON, RECTIFIER DIODE
1610 A, 4200 V, SILICON, RECTIFIER DIODE
5100 A, 3000 V, SILICON, RECTIFIER DIODE
5100 A, 3200 V, SILICON, RECTIFIER DIODE
1030 A, 3600 V, SILICON, RECTIFIER DIODE
2050 A, 2800 V, SILICON, RECTIFIER DIODE
1860 A, 4000 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
| IR180DR-G06PBF IR150DR-G08PBF IR150DR-G04PBF IR180 |
25 A, 600 V, SILICON, RECTIFIER DIODE
16 A, 800 V, SILICON, RECTIFIER DIODE
16 A, 400 V, SILICON, RECTIFIER DIODE
25 A, 200 V, SILICON, RECTIFIER DIODE
25 A, 1000 V, SILICON, RECTIFIER DIODE
16 A, 1200 V, SILICON, RECTIFIER DIODE
16 A, 100 V, SILICON, RECTIFIER DIODE
|
TT electronics Semelab, Ltd.
|
| 1N2282 1N1185A 1N1612 1N3055 1N4510 1N3573R 1N1581 |
35 A, 300 V, SILICON, RECTIFIER DIODE, DO-5
40 A, 150 V, SILICON, RECTIFIER DIODE, DO-5
5 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
0.125 A, SILICON, SIGNAL DIODE
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
3.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-4
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
1 A, 400 V, SILICON, SIGNAL DIODE, DO-4
1 A, 200 V, SILICON, SIGNAL DIODE, DO-4
0.8 A, SILICON, SIGNAL DIODE
35 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
275 A, 150 V, SILICON, RECTIFIER DIODE, DO-9
|
|
| TLYH20T TLSH20T TLOH20T TLRMH20T |
InGaAlP LED Panel Circuit Indicator
TOSHIBA InGaAP LED
TOSHIBA InGaAГP LED
TOSHIBA InGaA?P LED
|
TOSHIBA[Toshiba Semiconductor]
|
| EFM301B EFM302B EFM303B EFM304B EFM305B EFM306B EF |
3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AA
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA
SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER VOLTAGE RANGE 50 to 600 Volts CURRENT 3.0 Amperes
3 A, 150 V, SILICON, RECTIFIER DIODE, DO-214AA
|
RECTRON LTD
Rectron Semiconductor
|
| P1200A07 P1200S P1200D P1200J P1200B P1200K |
Standard silicon rectifier diodes 12 A, 800 V, SILICON, RECTIFIER DIODE
Standard silicon rectifier diodes 12 A, 100 V, SILICON, RECTIFIER DIODE
Standard silicon rectifier diodes 12 A, 600 V, SILICON, RECTIFIER DIODE
Standard silicon rectifier diodes 标准硅整流二极管
Standard silicon rectifier diodes 12 A, 200 V, SILICON, RECTIFIER DIODE
|
Semikron International
|
| MG1200V1US51 |
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
TOSHIBA GTR MODULE SILICON N-CHANNEL IGBT
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| CBR10-100P CBR35-100P CBR10-010P CBR10-020P CBR10- |
Leaded Bridge Rectifier General Purpose
SILICON BRIDGE RECTIFIER 35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
SILICON BRIDGE RECTIFIER 35 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
SILICON BRIDGE RECTIFIER 10 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
SILICON BRIDGE RECTIFIER 10 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
SILICON BRIDGE RECTIFIER 25 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
25 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
35 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
|
Central Semiconductor C...
CENTRAL[Central Semiconductor Corp]
Central Semiconductor Corp.
Central Semiconductor, Corp.
|
| TPCP8J01 |
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) Silicon NPN Epitaxial Type
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type
MOSFET TPC Series
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
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