| PART |
Description |
Maker |
| JANTXV1N827ATR-2 JANS1N827ATR-2 JANTXV1N827TR-2 JA |
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AH
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA
|
Microsemi, Corp.
Microsemi Corporation
|
| CPT-18-6037 |
Temperature Compensated Power Amplifier
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| MPXV2010DP MPXV2010GP MPX2010 MPX2010D MPX2010DP M |
Compensated Pressure Sensor
10 KPA ON CHIP TEMPERATURE COMPENSATED CALIBRATED SILICON PRESSURE SENSORS
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| MPXM2053GST1 MPXM2053GS MPXM2053 MPXM2053D MPXM205 |
Compensated Pressure Sensor
50 kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors
|
Freescale (Motorola)
Freescale Semiconductor, Inc
ETC[ETC]
飞思卡尔半导体(中国)有限公司
|
| MP3V5050V MP3V5050VC6T1 MP3V5050VC6U |
High Temperature Accuracy Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
|
Freescale Semiconductor, Inc
|
| CPT-8-2013 |
Temperature Compensated Power Amplifier 2 GHz - 8 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| TPT-18-6036 |
Temperature Compensated Power Amplifier 6 GHz - 18 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| TPT-18-6017 TPT-18-6016 |
Temperature Compensated Power Amplifier 6 GHz - 18 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| HE-TXO-10C1 HE-VTXO-10C1 HE-TXO-10D1 HE-VTXO-10D1 |
TEMPERATURE COMPENSATED OSCILLATOR
|
List of Unclassifed Manufacturers
ETC
|
