PART |
Description |
Maker |
1N828-1-1 1N822-2 1N829ATR 1N829ATR-1 1N829ATR-1-1 |
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AA 0TC Reference Voltage Zener 6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AH 6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated
|
MICROSEMI[Microsemi Corporation] Microsemi, Corp.
|
MPXV6115VC6U |
High Temperature Accuracy Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated From old datasheet system
|
Motorola
|
1N945B-1 1N943B-1 1N943A 1N943 1N942B-1 1N942A 1N9 |
Temperature Compensated Zener Reference Diodes(娓╁害琛ュ?榻?撼?哄?浜??绠? Temperature Compensated Zener Reference Diodes(温度补偿齐纳基准二极 11.12-12.28 zener diode 11.7 VOLT NOMINAL ZENER VOLTAGE
|
Compensated Deuices Inc... Microsemi Corporation CDI-DIODE[Compensated Deuices Incorporated] N.A. Compensated Devices Incorporated
|
MPXM2202 |
200 kPa On-Chip Temperature Compensated and Calibrated Silicon Pressure Sensors From old datasheet system 200 kPa On-Chip Temperature Compensated & Calibrated Pressure Sensors
|
Motorola
|
CPT-18-6038 CPT-18-6027 |
Temperature Compensated Power Amplifier 6 GHz - 18 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
TPT-13-6015 TPT-13-6014 |
Temperature Compensated Power Amplifier 6 GHz - 13 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
TPT-18-6036 |
Temperature Compensated Power Amplifier 6 GHz - 18 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
6755 6756 |
TEMPERATURE COMPENSATED
|
Vectron International, Inc
|
CMT-18-6007 |
Temperature Compensated Amplifier
|
TELEDYNE[Teledyne Technologies Incorporated]
|
HE-TXO-10C1 HE-VTXO-10C1 HE-TXO-10D1 HE-VTXO-10D1 |
TEMPERATURE COMPENSATED OSCILLATOR
|
List of Unclassifed Manufacturers ETC
|
CXOH7 |
Temperature Compensated Crystal Oscillator
|
Crystek Corporation
|