| PART |
Description |
Maker |
| ISD1720 |
Multi-Message Single-Chip Voice Record & Playback Device
|
Winbond
|
| TPCP8H02 |
TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
| TPCP8H01 |
TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
| HN4C05JU |
MULTI CHIP DISCRETE DEVICE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AND SWITCHING APPLICATIONS)
|
Toshiba Semiconductor
|
| 585-3211 585-3213 585-3215 585-3221 585-3225 585-3 |
Multi-Chip BASED LED T1 3/4 Bi-Pin
585 SERIES BASED LEDs-MULTI-CHIP SINGLE COLOR DISPLAY CLUSTER, RED, 5.9 mm
|
Dialight Corporation
Dialight PLC
|
| SSM5H11TU |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (N-ch SBD)
|
Toshiba Semiconductor
|
| ISD1100P ISD1100X ISD1112 ISD1110 ISD1120 ISD1110P |
Single-Chip Voice Record/Playback Device（Single-chip Durations of 12 seconds)(单片的录录音重放一片信息存储持续时12秒）) 单芯片语音记播放设备（单芯片的持续时12秒）（单片的录音/录音重放器（一片信息存储持续时12秒）
Single-Chip Voice Record/Playback Devices 10- and 12-Second Durations(单片声音录音/回放芯片(单片信息存储持续时间12秒钟))
Single-Chip Voice Record/Playback Device（Single-chip Durations of 10 seconds)(单片的录录音重放一片信息存储持续时0秒）)
Single-Chip Voice Record/Playback Device（Single-chip Durations of 12 seconds)(单片的录录音重放一片信息存储持续时2秒）)
SINGLE CHIP VOICE RECORD / PLAYBACK DEVICES
RES POWER .360 OHM 1W 5% SMT
|
List of Unclassifed Manufacturers
Winbond Electronics, Corp.
Winbond Electronics Corp
ETC
Electronic Theatre Controls, Inc.
|
| OP955 |
PIN Sili con Pho todiode
|
Optek Technology
ETC
OPTEK[OPTEK Technologies]
|
| CE201210-6N8J CE201210-5N6J CE201210-4N7J CE201210 |
IC,MOT,MC68HC908GR8CP, DIP-28, MCU FLASH 8BIT 8MHZ 4K
IC,MCU,MC68HC908JB8ADW,8-BIT SOIC-28,21 I/O,3MHZ
IC,MCU,MC68HC711E9CFN2,8-BIT 2MHz,PLCC52
8-BIT, OTPROM, 2.1 MHz, MICROCONTROLLER, PDIP20
IC,MCU,MC68HC908KX8CDW,8-BIT SOIC-16,13 I/O,8MHZ
Multi-Layer Chip Inductors 1 ELEMENT, 0.12 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0056 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.33 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0027 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0068 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0082 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
IC,MCU,MC68HC705C9ACFN,8-BIT PLCC-44,31 I/O,2MHZ 多层片式电感
Multi-Layer Chip Inductors 1 ELEMENT, 0.39 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns Inc.
Bourns, Inc.
|
| SYS32512ZK-010 SYS32512ZK-012 SYS32512ZK-015 SYS32 |
512 K x 32 Static RAM
512K X 32 MULTI DEVICE SRAM MODULE, 12 ns, PZMA72 PLASTIC, ZIP-72
512K X 32 MULTI DEVICE SRAM MODULE, 10 ns, PZMA72 PLASTIC, ZIP-72
512K X 32 MULTI DEVICE SRAM MODULE, 12 ns, PSMA72 PLASTIC, SIMM-72
512K X 32 MULTI DEVICE SRAM MODULE, 10 ns, PSMA72 PLASTIC, SIMM-72
512 K x 32 Static RAM 512亩32静态RAM
|
Amphenol, Corp.
MOSAIC
http://
Fujitsu, Ltd.
NXP Semiconductors N.V.
|
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