PART |
Description |
Maker |
MF1302T-1R8 MF1501T-1R5 MF1304T-6R8 MF1303T-100 MF |
Axial Molded Choke 0.5-2.5 GHz Ultralinear Mixer w/LO Buffer 8.5 - 11 GHz 6-bit Phase Shifter Low Noise Amp, SB Gain Block X-band Discrete Power pHEMT Ku-band Discrete Power pHEMT 18mm HFET 24mm HFET Cell-Band CDMA PA Module; 1-Bit Cell-Band PA Module; 1-Bit
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ECM Electronics Limited.
|
TGF2022-06 |
DC - 20 GHz Discrete power pHEMT
|
TriQuint Semiconductor,Inc.
|
TGF2022-60 |
DC - 20 GHz Discrete power pHEMT
|
TriQuint Semiconductor,Inc.
|
RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ... 2.4-2.5 GHz Power Amplifier From old datasheet system 2.4?2.5 GHz Power Amplifier Single-band power amplifiers 2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
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ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc] ANADIGICS Inc ANADIGICS, Inc.
|
MJ15002 MJ15001 MJ15001-D |
Power 15A 140V Discrete PNP Power 15A 140V Discrete NPN Complementary Silicon Power Transistors
|
ON Semiconductor
|
2SJ220 2SJ220L 2SJ220S |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0519-0 01; No. of Positions: 8; Connector Type: Board SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
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Hitachi,Ltd. Hitachi Semiconductor
|
TGF4250-SCC |
DC - 10.5 GHz Discrete HFET X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET
|
TriQuint Semiconductor, Inc.
|
10BF20 10BF80 10BF10 10BF40 10BF60 10BF100 10BF100 |
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Signal Diode SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极 1000V 1A Ultra-Fast Discrete Diode in a SMB package 100V 1A Ultra-Fast Discrete Diode in a SMB package 200V 1A Ultra-Fast Discrete Diode in a SMB package 400V 1A Ultra-Fast Discrete Diode in a SMB package 600V 1A Ultra-Fast Discrete Diode in a SMB package 800V 1A Ultra-Fast Discrete Diode in a SMB package
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Vishay Semiconductors International Rectifier, Corp. IRF[International Rectifier]
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BFY193 |
HIREL NPN SILICON RF TRANSISTOR (HIREL DISCRETE AND MICROWAVE SEMICONDUCTOR FOR LOW NOISE, HIGH GAIN BROADBAND AMPLIFIERS UP TO 2 GHZ.) From old datasheet system
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Siemens Semiconductor Group Infineon
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PE9304_06 9304-00 9304-01 9304-11 PE9304 PE930406 |
1- 7 GHz Low Power CMOS Divide-by-2 Prescaler 1 GHz - 7 GHz Low Power UltraCMOS Divide-by-2 Prescaler Rad-hard for Space Applications
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Peregrine Semiconductor Cor... PEREGRINE[Peregrine Semiconductor Corp.] Peregrine Semiconductor...
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