PART |
Description |
Maker |
M5M29GB161BVP M5M29WT160BVP M5M29GT161BVP M5M29GT1 |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY 16,777,216位(2097,152 - Word 1048,576字BY16位)的CMOS 3.3只,块擦除闪
|
Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
MR27V802D |
524288-Word x 16-Bit or 1048576-Word x 8-Bit One Time PROM 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit One Time PROM
|
OKI electronic components OKI[OKI electronic componets]
|
M5M28F101AFP |
1048576-BIT (131072-WORD BY 8-BIT) CMOS FLASH MEMORY
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
M5M51008DFP M5M51008DRV-55H M5M51008DRV-70H M5M510 |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
|
Renesas Electronics Corporation
|
MH1S64CWXTJ-1539 MH1S64CWXTJ-12 MH1S64CWXTJ-15 MH1 |
67108864-BIT (1048576-WORD BY 64-BIT)SynchronousDRAM From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M5M51008BKV-10VL-I M5M51008BKV-10VLL-I M5M51008BKV |
1048576-bit (131072-word by 8-bit) CMOS static SRAM
|
Mitsubishi Electric Corporation
|
M5M44258-7 |
STATIC COLUMN MODE 1048576-BIT (262144-WORD BY 4-BIT) DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
M5M51R16AWG-10L D99015 M5M51R16AWG-15L M5M51R16AWG |
From old datasheet system 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
M5M51R16AWG-10LI D98010 M5M51R16AWG-15LI M5M51R16A |
From old datasheet system 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576位(65536字由16位)的CMOS静RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
HM5118165BTT-8 HM5118165B HM5118165BJ-6 HM5118165B |
1048576-word x 16-bit Dynamic Random Access Memory
|
HITACHI[Hitachi Semiconductor]
|