| PART |
Description |
Maker |
| M5M29FB800VP-10 M5M29FT800VP-10 M5M29FT800VP-12 M5 |
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY 8,388,608位（1048,576 - Word 524,288字BY16位）的CMOS 3.3只，块擦除闪
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| MK31VT432-10YC |
4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M瀛??2浣??姝ュ???AM妯″?)
4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M字32位同步动态RAM模块) 4194304字32位同步动态随机存储器模块BANK）（4分字× 32位同步动态内存模块）
4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M字2位同步动态RAM模块)
From old datasheet system
|
OKI SEMICONDUCTOR CO., LTD.
|
| MH4V64AWXJ-5 MH4V64AWXJ-6 |
FAST PAGE MODE 268435456 - BIT ( 4194304 - WORD BY 64 - BIT ) DYNAMIC RAM 快速页面模68435456 -位（4194304 - Word64 -位）动态随机存储器
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| M5M29GB160BVP M5M29GB160BVP-80 M5M29GT160BVP M5M29 |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
From old datasheet system
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MH4M36CJD-6 MH4M36CJD-7 MH4M36CJD-5 MH4M36CJD |
FAST PAGE MODE ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM 快速页面模式（4194304 - Word6位）动态随机存储器
From old datasheet system
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MK31VT464-10YE |
4194304 Word x 64 Bit Synchronous Dynamic RAM Module (1BANK)(4M瀛??4浣??姝ュ???AM妯″?)
4194304 Word x 64 Bit Synchronous Dynamic RAM Module (1BANK)(4M字64位同步动态RAM模块)
4194304 Word x 64 Bit Synchronous Dynamic RAM Module (1BANK)(4M字4位同步动态RAM模块)
From old datasheet system
|
OKI SEMICONDUCTOR CO., LTD.
|
| MSM27C3202CZ |
2097152-Word x 16-Bit or 4194304-Word x 8-Bit One Time PROM
2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit One Time PROM 2097152字16位或4194304字8位一次性可编程
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| MH4S64DBKG-8 MH4S64DBKG-7 MH4S64DBKG-8L |
268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM
CAP USE W/ SERU AU OA BRN 268435456位（4194304 -文字4位）SynchronousDRAM
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| M5M44265CJ M5M44265CJ-5 M5M44265CJ-5S M5M44265CJ-6 |
EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M5Y416CWG-85HI |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH4S64CBMD-15B MH4S64CBMD-12B MH4S64CBMD-10B MH4S6 |
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH4S72CMA-10 MH4S72CMA-12 MH4S72CMA-15 MH4S72CMA |
301989888-BIT (4194304-WORD BY 72-BIT)SynchronousDRAM
From old datasheet system
|
Mitsubishi Electric Semiconductor
|
