| PART |
Description |
Maker |
| MDD56-08N1B MDD56-12N1B MDD56-14N1B MDD56-16N1B MD |
Diode Modules 71 A, 1800 V, SILICON, RECTIFIER DIODE, TO-240AA
CHOKE, DIFF/SYM MODE 2X55UH 2ACHOKE, DIFF/SYM MODE 2X55UH 2A; Inductance:55uH; Inductor type:Differential/Symmetrical; Current, DC max:2A; Resistance:0.07R; Case style:RS522; Frequency, resonant:7MHz; Voltage rating, AC:250V;
CHOKE, DIFF/SYM MODE 2X8UH 4ACHOKE, DIFF/SYM MODE 2X8UH 4A; Inductance:8uH; Inductor type:Differential/Symmetrical; Current, DC max:4A; Resistance:0.02R; Case style:RS614; Frequency, resonant:22MHz; Voltage rating, AC:250V; Approval
Thyristor and Rectifiers Modules
|
IXYS, Corp.
IXYS Corporation
|
| TQM829007 TQM829007-PCB |
0.6-1.0GHz ?W Digital Variable Gain Amplifier
|
TriQuint Semiconductor
|
| LX5530LQ LX5530 |
InGaP HBT 4.5 - 6.0GHz Power Amplifier
|
MICROSEMI[Microsemi Corporation]
|
| HM6P5331 |
HM6P5331 - 2.0GHz/500MHz Dual Frequency Synthesizer
|
HYNIX[Hynix Semiconductor]
|
| TIM4450-16UL09 |
HIGH POWER P1dB=42.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
| TIM4450-25UL |
HIGH POWER P1dB=44.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
| ALM-32120 |
0.7GHz - 1.0GHz 2 Watt High Linearity Amplifier
|
AVAGO TECHNOLOGIES LIMITED
|
| SY89872U0708 |
2.5V, 2GHz ANY DIFF. IN-TO-LVDS
|
Micrel Semiconductor
|
| MGFL48V1920 |
From old datasheet system
1.9-2.0GHz BAND 60W GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| AK8186B |
Multi Output Clock Generator with Integrated 2.0GHz VCO
|
Asahi Kasei Microsystems
|
| MGFC47A4450 |
4.4~5.0GHz BAND 50W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
