| PART |
Description |
Maker |
| UPB100422D-10 UPB100422B-10 |
256 x 4-bit 100K ECL RAM. Access time(max) 10 ns.
|
NEC
|
| CY7C197BN-25PC CY7C197BN-15VC |
256-Kb (256 K x 1) Static RAM Fast access time: 15 ns
256 Kb (256K x 1) Static RAM 256K X 1 STANDARD SRAM, 15 ns, PDSO24
256 Kb (256K x 1) Static RAM 256K X 1 STANDARD SRAM, 25 ns, PDIP24
|
Cypress Semiconductor, Corp.
|
| P4C422-25DC P4C422-25DMB P4C422-12FC P4C422-15FC P |
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 12 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 15 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 35 ns, PDSO24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 25 ns, PDIP22
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 25 ns, CDIP22
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, PDSO24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, CDIP22
HIGH SPEED 256 x 4 STATIC CMOS RAM 高速静56 × 4 CMOS存储
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| IS61LV25616 IS61LV2561 IS61LV25616-10T IS61LV25616 |
256 X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
ASYNCHRONOUS STATIC RAM
256 X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256 × 16高速异步的CMOS静态RAM.3V电源
|
Integrated Circuit Solu...
ICSI[Integrated Circuit Solution Inc]
Integrated Silicon Solution, Inc.
|
| 87C196JT AN87C196JQ AN87C196KR AN87C196JR AN87C196 |
Advanced 16-Bit CHMOS Microcontrollers
Advanced 16-bit CHMOS microcontroller. EPROM 12K, Reg RAM 360, Code RAM 128, I/O 41
Advanced 16-bit CHMOS microcontroller. EPROM 16K, Reg RAM 488, Code RAM 256, I/O 56
Advanced 16-bit CHMOS microcontroller. EPROM 16K, Reg RAM 488, Code RAM 256, I/O 41
Advanced 16-bit CHMOS microcontroller. EPROM 48K, Reg RAM 1.5K, Code RAM 512, I/O 41
|
Intel
|
| IDT72V8985 IDT72V8985DB IDT72V8985J IDT72V8985PV I |
From old datasheet system
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 256 x 256
256 x 256 TSI, 8 I/O at 2Mbps, Variable/Constant Delay, 3.3V
|
Integrated Device Technology
IDT
|
| SC5104F-15 SC5104 SC5104D SC5104D-12 SC5104D-15 SC |
64K X 4 BiCMOS ECL I/O STATIC RAM
|
Silicon Connections
ETC[ETC]
List of Unclassifed Manufacturers
|
| IDT101494 |
HIGH-SPEED BiCMOS ECL STATIC RAM 64K
|
IDT
|
| UPB100474B-15 UPB100474B-10 UPB100474B-6 |
1,024 x 4-bit 100K ECL RAM. Access time(max) 15 ns.
1,024 x 4-bit 100K ECL RAM. Access time(max) 10 ns.
1,024 x 4-bit 100K ECL RAM. Access time(max) 6 ns.
|
NEC
|
| CY7C199CN-15PXC CY7C199CNL-15VXI |
256 K (32 K 8) Static RAM
|
Cypress
|
| HYE25L256160AC HYE25L256160AC-75 HYE25L256160AC-8 |
256-Mbit Mobile-RAM
|
Infineon Technologies AG
|
