| PART |
Description |
Maker |
| STM915-16 |
RF POWER MODULE GSM MOBILE APPLICATIONS
|
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| MF1090V-3 |
FOR E-GSM MOBILE TELEPHONE, Rx 对于电子的GSM移动电话，接
From old datasheet system
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MRFIC1859 |
Dual-Band GSM 3.6V Integrated RF Power Amplifier(GSM 3.6V集成式射频功
|
Motorola, Inc.
|
| MRF18085B |
MRF18085B, MRF18085BR3, MRF18085BLSR3 GSM/GSM EDGE 1.9-1.99 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| AWT6280RM11P8 AWT6280RM11P9 |
Quad-band GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc
|
| TQM7M4007 |
Quad-Band GSM / GPRS Power Amplifier Module
|
TriQuint Semiconductor
|
| PF01411B |
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
HITACHI[Hitachi Semiconductor]
|
| PF01410 PF01410A |
MOS FET Power Amplifier Module for GSM Handy Phone
|
HITACHI[Hitachi Semiconductor]
|
| MMM6025 |
Quad-Band GSM/GPRS Power Amplifier Front-End Module
|
Freescale Semiconductor
|
| TQM7M5013 |
Quad-Band GSM / GPRS / EDGE-Linear Power Amplifier Module
|
TriQuint Semiconductor
|
| RF3133 RF3133PCBA-41X RF313305 |
QUAD-BAND GSM850/GSM/DCS/PCS POWER AMP MODULE
|
RF Micro Devices
|
