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STK-086G - 50,70W MIN AP POWER AMP

STK-086G_1318370.PDF Datasheet


 Full text search : 50,70W MIN AP POWER AMP


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STK-032 STK032 25 W MIN AF POWER AMP
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HS-2510RH Op Amp, Wide Power Bandwidth 750kHz (Min), High Slew Rate, 65V/s (Typ), Rad-Hard
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STK8280 80W MIN AF POWER AMP, OUTPUT STAGE (DUAL SUPPLIES) WITH BUILT-IN QUASI CLASS A BIAS CIRCUIT
Sanyo Semicon Device
A82DL1642 A82DL16X2T A82DL1622 A82DL1632 A82DL1632 Reed Switch; Pull-In Amp Turns Max:25; Pull-In Amp Turns Min:16; Circuitry:SPST-NO; Switching Current Max:1A; Switching Voltage Max:200VDC; Mounting Type:PCB; Body Length:13.5mm; Breakdown Voltage Min:250VDC
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash 堆叠式多芯片封装(MCP)闪存和SRAM,A82DL16x2T(ü)16兆位Mx8 Bit/1Mx16位)的CMOS 3.3伏只,同时闪电行
AMIC Technology Corporation
AMIC Technology, Corp.
TC74AC273P07 TC74AC273P TC74AC273F CMOS Digital Integrated Circuit Silicon Monolithic Octal D-Type Flip Flop with Clear
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.42 to 4.61; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP CMOS数字集成电路硅单片八路D类拖鞋与Clear
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.55 to 4.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP CMOS数字集成电路硅单片八路D类拖鞋与Clear
Toshiba Semiconductor
Toshiba, Corp.
5050871-1 Discrete Sockets; SOCKET,MIN-SPR W/H SN-AU SER-5 ( AMP )
Tyco Electronics
CMF02 Zener Diode; Application: General; Pd (mW): 400; Vz (V): 9.7 to 10.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 9.7 to 10.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
Switching Mode Power Supply Applications
Toshiba Corporation
Toshiba Semiconductor
HDF1205S HDF2415D HDF2412D HDF2412S HDF1215S HDF24 NTE Silicon General Purpose Amplifier, Type: NPN
Thermal Fuse; Current Rating:15A; Opening Temperature:240 C; Fuse Terminals:Axial Lead; Voltage Rating:277V; Fuse Size/Group:3.22 "; Voltage Rating:277V RoHS Compliant: Yes 3瓦特HD系列
3 Watt HD Series 3瓦特HD系列
Waveform Generator; IC Function:Waveform Generator IC; Package/Case:14-DIP; Supply Current:15mA; Supply Voltage:36V; Supply Voltage Max:30V; Supply Voltage Min:10V; Frequency Max:200kHz
Audio Power Amplifier IC; Output Power, Po:325mW; Load Impedance Min:8ohm; Supply Voltage Max:12V; Supply Voltage Min:4V; Package/Case:8-DIP; Amplifier Type:; Bias Current:250nA; Number of Amplifiers:1; Offset Voltage:50kV
IC-QUAD COMPARATOR
Operational Amplifier (Op-Amp) IC; Number of Amplifiers:2; Bandwidth Max:4MHz; Slew Rate:13V/us; Package/Case:8-DIP; Dual Supply Voltage Max ( /- V):18V; Mounting Type:Through Hole
Operational Amplifier (Op-Amp) IC; No. of Amplifiers:1; Amplifier Type:; Slew Rate:13V/us; Bandwidth Max:4MHz; Bias Current:7nA; Dual Supply Voltage Max ( V):18V; Gain:4dB; Offset Voltage:13mV; Package/Case:8-DIP RoHS Compliant: Yes
IC-QUAD JFET INPUT OP AMP
Shindengen Electric Manufacturing Co., Ltd.
Shindengen Electric Manufacturing Company, Ltd.
Shindengen Electric Mfg. Co., Ltd.
AP7217-XXS AP7217-33SG-13 AP7217-33SG-U Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 3.7 to 4.1; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 3.1 to 3.5; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 3.1 to 3.5; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD 3.3 V FIXED POSITIVE LDO REGULATOR, 0.25 V DROPOUT, PDSO8
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 3.4 to 3.8; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD 3.3 V FIXED POSITIVE LDO REGULATOR, 0.25 V DROPOUT, PDSO8
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 2.8 to 3.2; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD 500mA的CMOS低压
Diodes Inc.
Diodes, Inc.
 
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