| PART |
Description |
Maker |
| STGY40NC60VD |
N-channel 600V - 50A - Max247 Very fast PowerMESH IGBT
N-channel 600V - 50A - Max247 Very fast PowerMESH⑩ IGBT
|
STMicroelectronics
|
| STGY50NC60WD GY50NC60WD |
N-channel 600V - 50A - Max247 Very fast PowerMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| STY25NA60 6064 |
N - CHANNEL 600V - 0.225W - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET
N - CHANNEL 600V - 0.225ohm - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET
From old datasheet system
N - CHANNEL 600V - 0.225 - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET
N-CHANNEL Power MOSFET
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| STGE50NC60WD |
N-channel 50A - 600V - ISOTOP Ultra fast switching PowerMESHTM IGBT
|
STMicroelectronics
|
| FDD16AN08A0 FDD16AN08A0NL |
Discrete Automotive N-Channel UltraFET Trench MOSFET, 75V, 50A, 0.016 Ohms @ VGS = 10V, TO-252/DPAK Package 9 A, 75 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
N-Channel UltraFET Trench MOSFET 75V/ 50A/ 16m
N-Channel UltraFET ?Trench MOSFET 75V, 50A, 16mOhm
N-Channel UltraFET Trench MOSFET 75V, 50A, 16mз
N-Channel UltraFET Trench MOSFET 75V, 50A, 16m?/a>
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| RURG5060 FN3211 |
50A/ 600V Ultrafast Diode
50A, 600V Ultrafast Diode
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| STY30NK90Z |
N-CHANNEL 900V - 0.25 OHM - 26A MAX247 ZENER-PROTECTED SUPERMESH™ POWER MOSFET
N-CHANNEL 900V - 0.21ohm - 26A Max247 Zener-Protected SuperMESH MOSFET
|
ST Microelectronics
|
| STY60NM50 |
N-CHANNEL 500V - 0.045 OHM - 60A MAX247 ZENER-PROTECTED MDMESH POWER MOSFET
N-CHANNEL 500V - 0.045ohm - 60A Max247 Zener-Protected MDmesh⑩Power MOSFET
N-CHANNEL 500V - 0.045 OHM - 60A MAX247 ZENER-PROTECTED MDMESH POWER MOSFET
N-CHANNEL 500V - 0.045ohm - 60A Max247 Zener-Protected MDmesh?Power MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| SSG50C120 SSG50C60 SSG50C100 SSG50C40 |
TRIAC|1.2KV V(DRM)|50A I(T)RMS|TO-208VARM8
TRIAC|600V V(DRM)|50A I(T)RMS|TO-208VARM8 可控硅| 600V的五（DRM）的| 50A条口（T）的有效值|08VARM8
TRIAC|1KV V(DRM)|50A I(T)RMS|TO-208VARM8
TRIAC|400V V(DRM)|50A I(T)RMS|TO-208VARM8
|
|
| 6MBI50F-060 |
IGBT(600V 50A)
|
Fuji Electric
|
| STY34NB50F |
N-CHANNEL 500V - 0.11 OHM - 34A - MAX247 POWERMESH MOSFET
|
STMicroelectronics
|
