| PART |
Description |
Maker |
| STP12NM60N STF12NM60N STB12NM60N-1 STW12NM60N STB1 |
N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET
N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh?/a> Power MOSFET
N-channel 600V - 0.35楼? - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh垄芒 Power MOSFET
N-channel 600V - 0.35ヘ - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| STF12NK60Z STP12NK60Z F12NK60Z P12NK60Z |
N-CHANNEL 600V - 0.53 Ohm - 10A TO-220 / TO-220FP Zener-Protected SuperMESH?MOSFET
N-CHANNEL 600V - 0.53 Ohm - 10A TO-220 / TO-220FP Zener-Protected SuperMESH⑩MOSFET
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STMICROELECTRONICS[STMicroelectronics]
|
| STGB10NB60S STGB10NB60ST4 STGP10NB60S_05 GB10NB60S |
N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT
N-CHANNEL 10A 600V TO-220/TP-220FP/DPAK PowerMESH"IGBT
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| STD11NM60N STF11NM60N STB11NM60N-1 STP11NM60N STD1 |
N-channel 600V - 0.37楼? - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh垄芒 Power MOSFET
N-channel 600V - 0.37Ω - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh Power MOSFET
N-channel 600V - 0.37Ω - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh?/a> Power MOSFET
|
STMicroelectronics
|
| STGP10NC60HD STGB10NC60HD GB10NC60HD GP10NC60HD |
N-channel 600V - 10A - TO-220 - D2PAK Very fast PowerMESH TM IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| STB11NM60N-1 |
N-channel 600V - 0.37- 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmeshPower MOSFET
|
意法半导
|
| STGP7NB60FD STGB7NB60FD STGB7NB60FDT4 |
N-CHANNEL 7A 600V TO-220/D2PAK POWERMESH IGBT
N-CHANNEL 7A - 600V TO-220 / D2PAK PowerMESH IGBT N沟道A - 600V 220 / D2PAK封装PowerMESHIGBT
(STGP7NB60FD / STGB7NB60FD) N-CHANNEL 7A - 600V TO-220 / D2PAK PowerMESH IGBT
14 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
ST Microelectronics
|
| STGP10N60 STGP10N60L 6209 |
25 A, 600 V, N-CHANNEL IGBT, TO-220AB
From old datasheet system
N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| Q6025G Q6025J6 Q6025K6 Q6025L5 Q6025L6 Q6025L9ALT |
TRIAC|600V V(DRM)|40A I(T)RMS|TO-208AA
TRIAC|600V V(DRM)|12A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 12A条口（T）的有效值|20
TRIAC|200V V(DRM)|40A I(T)RMS|TO-218 可控硅| 200伏五（DRM）的| 40A条口（T）的有效值|18
TRIAC|600V V(DRM)|12A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 12A条口T）的有效值|20
Transient Voltage Suppressor Diodes 可控硅| 200伏五（DRM）的| 5A条口（T）的有效值|20
TRIAC|600V V(DRM)|15A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 15A条口（T）的有效值|20
Transient Voltage Suppressor Diodes 可控硅| 400V五（DRM）的| 25A条口（T）的有效值|20
TRIAC|600V V(DRM)|4A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 4A条口（T）的有效值|20
Transient Voltage Suppressor Diodes 可控硅| 800V的五（DRM）的| 12A条口（T）的有效值|20
TRIAC|500V V(DRM)|4A I(T)RMS|TO-220 可控硅| 500V五（DRM）的| 4A条口T）的有效值|20
TRIAC|400V V(DRM)|3A I(T)RMS|TO-202 可控硅| 400V五（DRM）的| 3A条口（T）的有效值|02
TRIAC|400V V(DRM)|4A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 4A条口（T）的有效值|20
TRIAC|200V V(DRM)|12A I(T)RMS|TO-220 可控硅| 200伏五（DRM）的| 12A条口（T）的有效值|20
TRIAC|400V V(DRM)|12A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 12A条口（T）的有效值|20
TRIAC|400V V(DRM)|40A I(T)RMS|TO-218 可控硅| 400V五（DRM）的| 40A条口（T）的有效值|18
TRIAC|400V V(DRM)|10A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 10A条口（T）的有效值|20
TRIAC|600V V(DRM)|40A I(T)RMS|TO-218 可控硅| 600V的五（DRM）的| 40A条口（T）的有效值|18
TRIAC|800V V(DRM)|12A I(T)RMS|TO-220 可控硅| 800V的五（DRM）的| 12A条口（T）的有效值|20
THYRISTOR MODULE|TRIAC 晶闸管模块|可控
TRIAC|800V V(DRM)|15A I(T)RMS|TO-220 可控硅| 800V的五（DRM）的| 15A条口（T）的有效值|20
Transient Voltage Suppressor Diodes 可控硅| 200伏五（DRM）的| 8A条口（T）的有效值|20
TRIAC|400V V(DRM)|4A I(T)RMS|TO-202 可控硅| 400V五（DRM）的| 4A条口（T）的有效值|02
Transient Voltage Suppressor Diodes 可控硅| 400V五（DRM）的| 8A条口（T）的有效值|20
TRIAC|600V V(DRM)|8A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 8A条口（T）的有效值|20
TRIAC|200V V(DRM)|8A I(T)RMS|TO-220 可控硅| 200伏五（DRM）的| 8A条口（T）的有效值|20
TRIAC|400V V(DRM)|8A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 8A条口（T）的有效值|20
Transient Voltage Suppressor Diodes 可控硅| 700V的五（DRM）的| 25A条口（T）的有效值|20
可控硅| 200伏五（DRM）的| 10A条口（T）的有效值|20
TRIAC|300V V(DRM)|6A I(T)RMS|TO-220
TRIAC|600V V(DRM)|25A I(T)RMS|TO-39
TRIAC|600V V(DRM)|8A I(T)RMS|TO-202
TRIAC|500V V(DRM)|8A I(T)RMS|TO-202
TRIAC|200V V(DRM)|3A I(T)RMS|TO-202
TRIAC|500V V(DRM)|25A I(T)RMS|TO-220
TRIAC|200V V(DRM)|8A I(T)RMS|TO-202
TRIAC|600V V(DRM)|3A I(T)RMS|TO-220
TRIAC|400V V(DRM)|8A I(T)RMS|TO-202
TRIAC|800V V(DRM)|16A I(T)RMS|TO-220
TRIAC|600V V(DRM)|25A I(T)RMS|PRESS-13
TRIAC|500V V(DRM)|15A I(T)RMS|TO-3
TRIAC|500V V(DRM)|40A I(T)RMS|TO-218VAR
TRIAC|200V V(DRM)|10A I(T)RMS|TO-203AA
TRIAC|200V V(DRM)|15A I(T)RMS|TO-208AA
TRIAC|400V V(DRM)|10A I(T)RMS|TO-203AA
TRIAC|400V V(DRM)|10A I(T)RMS|FBASE-R-HW30
TRIAC|600V V(DRM)|10A I(T)RMS|FBASE-R-HW30
TRIAC|200V V(DRM)|10A I(T)RMS|FBASE-R-HW30
TRIAC|200V V(DRM)|10A I(T)RMS|TO-208AA
TRIAC|600V V(DRM)|10A I(T)RMS|TO-203AA
TRIAC|200V V(DRM)|20A I(T)RMS|TO-220
TRIAC|200V V(DRM)|6A I(T)RMS|TO-220
TRIAC|500V V(DRM)|25A I(T)RMS|TO-218VAR
TRIAC|600V V(DRM)|25A I(T)RMS|TO-218VAR
TRIAC|400V V(DRM)|25A I(T)RMS|TO-218VAR
TRIAC|400V V(DRM)|40A I(T)RMS|TO-218VAR
TRIAC|200V V(DRM)|40A I(T)RMS|TO-218VAR
TRIAC|400V V(DRM)|10A I(T)RMS|TO-8
RF inductor, ceramic core, 5% tol, SMT, RoHS
TRIAC|400V V(DRM)|25A I(T)RMS|FBASE-R
TRIAC|600V V(DRM)|25A I(T)RMS|FBASE-R
TRIAC|500V V(DRM)|25A I(T)RMS|FBASE-R
TRIAC|200V V(DRM)|25A I(T)RMS|FBASE-R
TRIAC|600V V(DRM)|25A I(T)RMS|TO-220
TRIAC|400V V(DRM)|25A I(T)RMS|TO-220
TRIAC|400V V(DRM)|15A I(T)RMS|TO-220
TRIAC|200V V(DRM)|15A I(T)RMS|TO-220
TRIAC|500V V(DRM)|8A I(T)RMS|TO-220
TRIAC|600V V(DRM)|25A I(T)RMS|TO-208AA
TRIAC|400V V(DRM)|40A I(T)RMS|TO-208AA
TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|500V V(DRM)|12A I(T)RMS|TO-220
TRIAC|200V V(DRM)|12A I(T)RMS|TO-220AB
TRIAC|400V V(DRM)|6A I(T)RMS|TO-220
TRIAC|600V V(DRM)|6A I(T)RMS|TO-220
TRIAC|700V V(DRM)|40A I(T)RMS|TO-218
TRIAC|200V V(DRM)|4A I(T)RMS|TO-220
TRIAC|600V V(DRM)|16A I(T)RMS|TO-220
TRIAC|600V V(DRM)|5A I(T)RMS|TO-220
TRIAC|200V V(DRM)|10A I(T)RMS|TO-220
TRIAC|600V V(DRM)|10A I(T)RMS|TO-220
TRIAC|600VV(DRM)|8AI(T)RMS|TO-220
TRIAC|600VV(DRM)|25AI(T)RMS|FBASE-R
TRIAC|600VV(DRM)|25AI(T)RMS|CAN
TRIAC|600VV(DRM)|25AI(T)RMS|TO-39
TRIAC|800VV(DRM)|25AI(T)RMS|TO-220AB
THYRISTORMODULE|TRIAC
TRIAC|600VV(DRM)|25AI(T)RMS|TO-220AB
TRIAC|600VV(DRM)|25AI(T)RMS|TO-220
TRIAC|600VV(DRM)|25AI(T)RMS|TO-218
TRIAC|600VV(DRM)|25AI(T)RMS|TO-218VAR
TRIAC|600VV(DRM)|25AI(T)RMS|PRESS-13
TRIAC|200V V(DRM)|25A I(T)RMS|TO-220
|
Samsung Semiconductor Co., Ltd.
Vishay Intertechnology, Inc.
STMicroelectronics N.V.
Xicon Passive Components
Anpec Electronics, Corp.
Littelfuse, Inc.
International Rectifier, Corp.
Motorola Mobility Holdings, Inc.
Electronic Theatre Controls, Inc.
Mitsubishi Electric, Corp.
Jiangsu Changjiang Electronics Technology Co., Ltd.
GTM, Corp.
|
| STD11NM60N-1 STP11NM60N STF11NM60N D11NM60N F11NM6 |
N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET N沟道600V.37ohm - 10A条至22020FP -像是iPak - DPAK封装第二代MDmesh功率MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| STGB3NB60FD STGD3NB60F STGP3NB60F STGP3NB60FD STGF |
(STGP3NB60F / STGD3NB60F / STGF3NB60FD / STGB3NB60FD) N-CHANNEL 3A - 600V - TO-220/TO-220FP/DPAK/D2PAK PowerMESH IGBT
N-CHANNEL 3A - 600V - TO-220/TO-220FP/DPAK/D2PAK PowerMESH⑩ IGBT
N-CHANNEL 3A - 600V TO-220/TO-220FP/DPAK/D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V - TO-220/TO-220FP/DPAK/D2PAK PowerMESH?/a> IGBT
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
