| PART |
Description |
Maker |
| SPP80N08S2-07 SPI80N08S2-07 SPB80N08S2-07 |
Low Voltage MOSFETs - TO220/263; 80 A; 75V; NL; 7,4 mOhm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPP80N08S2L-07 SPB80N08S2L-07 |
Low Voltage MOSFETs - TO220/263; 80 A; 75V; LL; 7,1 mOhm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPP80N06S2L-H5 SPB80N06S2L-H5 |
Low Voltage MOSFETs - TO220/263; 80 A; 55V; LL; 5 mOhm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPB100N04S2-04 SPP100N04S2-04 |
Low Voltage MOSFETs - TO220/263; 100A; 40V; NL;3.6mohm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPB80N06S2L-05 SPP80N06S2L-05 SPI80N06S2L-05 |
Low Voltage MOSFETs - TO220/263/262; 80 A; 55V; LL; 4,8 mOhm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPB100N06S2-05 SPP100N06S2-05 |
Low Voltage MOSFETs - TO220/263; 100 A; 55V; NL; 5 mOhm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPP80N04S2-H4 SPB80N04S2-H4 SPI80N04S2-H4 |
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - TO220/262/263; 80A; 40V; NL; 4mOhm
|
INFINEON[Infineon Technologies AG]
|
| SPP80N06S2-05 SPB80N06S2-05 |
Low Voltage MOSFETs - TO220/263; 80 A; 55V; NL; 5.1 mOhm
OptiMOS Power-Transistor
2.00mm Pitch DIL Female Crimp Housing, 10 10-way
|
INFINEON[Infineon Technologies AG]
|
| SPP80N10L SPB80N10L SPI80N10L |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=14mOhm, 80A, LL
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=14mOhm, 80A, LL
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=14mOhm, 80A, LL
SIPMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| KMB4D0N30SA |
Low Voltage MOSFETs
|
Korea Electronics (KEC)
|
| SPP80N03S2L-04 SPB80N03S2L-04 SPI80N03S2L-04 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.1mOhm, 80A, LL 80 A; 30V; LL; 4.2 mOhm
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.9mOhm, 80A, LL
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| IXFN38N100Q2 |
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 38 A, 1000 V, N-CHANNEL, Si, POWER, MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
