| PART |
Description |
Maker |
| ML9XX31 ML9SM31 ML9SM31-01-00 ML9SM31-01-01 ML9SM3 |
1536 nm, LASER DIODE
1553 nm, LASER DIODE
1558 nm, LASER DIODE
1544 nm, LASER DIODE
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管EA调制
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管与EA调制
1549 nm, LASER DIODE
|
Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| SPC40C-980-01 SPC30C-980-01 |
40W / 30W 980nm High Brightness Single-Mode Laser Diode Bar on Passive Cu Block Cooler
|
Bookham, Inc.
|
| ML9XX22 ML9SM11 ML9SM11-02 ML9SM11-03 ML9SM22 ML9S |
2.5Gbps DWDM InGaAsP DFB-LASER DIODE 高达2.5Gbps的DWDM激光器InGaAsP的激光二极管
1557 nm, LASER DIODE
1555 nm, LASER DIODE
|
Mitsubishi Electric Semicon...
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| AS081Q1200W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik GmbH
|
| MMBZ15VAL MMBZ9V1AL MMBZ5V6AL10 MMBZ27VAL MMBZ6V2A |
24W AND 40W PEAK POWER DUAL SURFACE MOUNT TVS
TVS UNIDIRECT CA 40W 14.5V SOT23 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
|
Diodes Incorporated
Diodes, Inc.
|
| ZHMA2901 ZHMA2911 |
Diode Array Diode Array; Case Size: 19x9 mm; Packaging: Bulk 0.1 A, 40 V, 6 ELEMENT, SILICON, SIGNAL DIODE
Diode Array Diode Array 0.1 A, 40 V, 8 ELEMENT, SILICON, SIGNAL DIODE
|
Bourns, Inc.
Nichicon, Corp.
|
| SPLLG81-P |
Passiv gekuhlter SIRILAS Diodenlaser 15 W cw bei 808nm Conductively cooled SIRILAS? Laser Diode Array 15 W cw at 808nm
Passiv gekuhlter SIRILAS Diodenlaser 15 W cw bei 808nm Conductively cooled SIRILAS㈢ Laser Diode Array 15 W cw at 808nm
|
OSRAM GmbH
|
| NX8369TS |
LASER DIODE 1 625 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
California Eastern Labs
|
| NX6411GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| NX6240GP |
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
|
Renesas Electronics Corporation
|
| NX6342EP |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
|
Renesas Electronics Corporation
|
| SLD324ZT-21 SLD324ZT |
High-Power Density 2W Laser Diode
798 nm, LASER DIODE M-272, 12 PIN
|
SONY
NXP Semiconductors N.V.
|
