| PART |
Description |
Maker |
| SLD-2083CZ |
12 Watt Discrete LDMOS FET in Ceramic Package
|
sirenza.com
SIRENZA[SIRENZA MICRODEVICES]
|
| SLD2083CZ |
10 Watt high performance LDMOS transistor designed
|
sirenza
|
| 1.5KE100CA 1.5KE110CA 1.5KE120CA 1.5KE130CA 1.5KE1 |
Discrete POWER & Signal Technologies
UHV240-KH/AS
PTSA 0.5/ 9-2.5-Z
Discrete POWER & Signal Technologies 分立功率
1500 Watt Transient Voltage Suppressors(功500瓦的瞬变电压抑制 1500瓦特瞬态电压抑制器（功500瓦的瞬变电压抑制器）
1500 Watt Transient Voltage Suppressors(???500???????靛??????
Glass passivated junction. 1500W Peak Pulse Power capability at 1.0 ms.
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
http://
|
| SLD2083CZ |
10 Watt high performance LDMOS transistor designed for operation to 2700MHz
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| AN1228 |
RELATE LDMOS DEVICE PARAMETERS TO RF PERFORMANCE
|
SGS Thomson Microelectronics
|
| TGF2023-2-02 TGF2023-2-02-15 |
12 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2952 TGF2952-15 |
7 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-2-01 |
6 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| P2500SL |
LCAS Asymmetrical Discrete Device
|
Littelfuse
|
| HN2E05J |
MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
|
Toshiba Corporation
Toshiba Semiconductor
|
| MHVIC2115R2 |
MHVIC2115R2 2.2 GHz, 26 V, 23/34 dBm W-CDMA RF LDMOS Integrated Circuit
RF LDMOS Wideband Integrated Power Amplifier
|
MOTOROLA[Motorola, Inc]
|
| MPSW51_D MPSW51A ON2354 MPSW51 |
*Motorola Preferred Device
One Watt High Current Transistors(PNP Silicon)
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
