| PART |
Description |
Maker |
| VIO130-06P1 VII130-06P1 VDI130-06P1 VID130-06P1 IX |
IGBT Modules
From old datasheet system
IGBT Modules: Buck Configurated IGBT Modules
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS[IXYS Corporation]
|
| M57959 M57959L |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
From old datasheet system
HYBRID IC FOR DRIVING IGBT MODULES
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
ETC
Mitsubishi Electric Corporation
|
| VIO50-12P1 VII50-12P1 VDI50-12P1 VID50-12P1 |
IGBT Modules: Boost Configurated IGBT Modules
From old datasheet system
|
IXYS[IXYS Corporation]
|
| FS15R12VT3 |
IGBT-modules
IGBT Modules up to 1200V SixPACK; Package: AG-EASY750-1; IC (max): 15.0 A; VCE(sat) (typ): 1.7 V; Configuration: SixPACK; Technology: IGBT3; Housing: EasyPACK 750;
|
eupec GmbH
Infineon Technologies
|
| VID75-06P1 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
| MID100-12A3 MII100-12A3 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS Corporation
|
| SKM100GAL163D SKM200GAL123D SKM400GA123D SKM300GA1 |
SEMITRANS IGBT Modules New Range SEMITRANS IGBT模块的新范围
SEMITRANS IGBT Modules New Range 100 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON[Semikron International]
|
| RM60CZ-2H RM60DZ-2H RM60CZ-H RM60DZ-H RM60DZ-M RM6 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| 2ED020I12-F |
Dual IGBT Driver IC for eupec Low and Medium Power IGBT Modules
|
eupec GmbH
|
| SEMIX653GD176HDC |
Trench IGBT Modules 650 A, 1700 V, N-CHANNEL IGBT
|
SEMIKRON[Semikron International]
|
| SEMIX352GB128DS08 |
SPT IGBT Modules 370 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
| SEMIX151GB12T4S |
Trench IGBT Modules 230 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON
|
