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SGW6N60UFD - Discrete, High Performance IGBT with Diode Ultra-Fast IGBT

SGW6N60UFD_1308306.PDF Datasheet


 Full text search : Discrete, High Performance IGBT with Diode Ultra-Fast IGBT


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Bipolar Transistor; Collector Emitter Voltage, Vceo:350V; Transistor Polarity:NPN; Power Dissipation:1W; DC Current Gain Min (hfe):40; Collector Current:1A; Package/Case:3-TO-39; DC Current Gain Max (hfe):60; Terminal Type:5
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