| PART |
Description |
Maker |
| SSP4N60AS SSP4N60ASJ69Z |
4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
Advanced Power MOSFET
Advanced Power MOFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| SFW12955 SFW2955 |
Advenced Power MOSFET 9.4 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
Advanced Power MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRL540A |
Advanced Power MOSFET 28 A, 100 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| IRFI1010NPBF IRFI1010NPBF-15 |
ADVANCED PROCESS TECHNOLOGY
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
|
International Rectifier
|
| SFW9530 SFI9530 |
Advanced Power MOSFET 10.5 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRLM110A IRLM110ATF |
N-CHANNEL MOSFET
HEXFET Power MOSFET
Advanced Power MOSFET
100V N-Channel Logic Level A-FET
|
International Rectifier
FAIRCHILD[Fairchild Semiconductor]
|
| IRFL024 IRFL024N IRFL024NTRPBF IRFL024NTR |
Surface Mount
Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=2.8A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=55V Rds(on)=0.075ohm Id=2.8A)
N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管)
Advanced Process Technology
|
IRF[International Rectifier]
|
| IRFS840A |
N-Channel Power MOSFET00V.85Ω.6AN沟道功率MOS场效应管（漏源电00V，导通电.85Ω，漏电流4.6A 4.6 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET
Advanced Power MOSFET
|
Fairchild Semiconductor, Corp.
|
| IRFS530 IRFS530A IRFS530ANL |
N-CHANNEL POWER MOSFET
Advanced Power MOSFET
100V N-Channel A-FET / Substitute of IRFS530
|
FAIRCHILD[Fairchild Semiconductor]
|
| STK0825F |
Advanced Power MOSFET
|
AUK[AUK corp]
|
| STK1625F |
Advanced Power MOSFET
|
AUK[AUK corp]
|
