| PART |
Description |
Maker |
| IRFIZ46N |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=55V Rds(on)=0.020ohm Id=33A)
Power MOSFET(Vdss=55V, Rds(on)=0.020ohm, Id=33A) 功率MOSFET（减振钢板基本\u003d 55V的，的Rds（on）\u003d 0.020ohm，身份证\u003d 33A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| NTD3055-094 NTD3055-094T4G NTD3055-094-1 NTD3055-0 |
Power MOSFET 12 A, 60 V
Power MOSFET 12Amps, 60Volts N-Channel DPAK(12A, 60VN通道，DPAK封装的功率MOSFET)
Power MOSFET 12Amps, 60Volts N-Channel DPAK(12A, 60V，N通道，DPAK封装的功率MOSFET)
Power MOSFET 12 Amps, 60 Volts
|
ONSEMI[ON Semiconductor]
|
| STC6NF30V_07 C6NF30V STC6NF30V |
N-channel 30V - 0.020ohm - 6A - TSSOP8 2.5V-drive STripFE TM II Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| STP50NE10L 6037 |
From old datasheet system
N - CHANNEL 100V - 0.020ohm - 50A TO-220 STripFET POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| ISL9G1260EP3 ISL9G1260ES3 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|甲一（c）|63AB
|
Hynix Semiconductor, Inc.
|
| 878-2-3 SD878-2-3 |
CAP & CHAN, SMA
|
Winchester Electronics Corporation
|
| MUX-08 MUX08BQ MUX08AQ MUX08EQ MUX08FPZ MUX08FQ |
8-Chan JFET Analog Multiplexers
|
Analog Devices
|
| IC-MB3TSSOP24 IC-MB3EVALMB3D-P IC-MB3EVALMB3D-S |
BiSS INTERFACE MASTER, 1-Chan./3-Slaves
|
IC-Haus GmbH
|
| IRGC5B120UB |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP
|
|
| NE72084 |
TRANSISTOR,MESFET,N-CHAN,5V V(BR)DSS,MICRO-X
From old datasheet system
|
California Eastern Laboratories Inc
|
| TC514410AJ-60 TC514410AP TC514410AP-60 TC514410ASJ |
IC-7 CHAN. CMOS/TTL DR
1,048,576 x 4 BIT DYNAMIC RAM
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| ICL7665S06 ICL7665SAIBAZA ICL7665SAIPAZ ICL7665SIB |
CMOS Micropower Over/Under Voltage Detector; Temperature Range: 0°C to 70°C; Package: 8-SOIC T&R
|
INTERSIL[Intersil Corporation]
|
