| PART |
Description |
Maker |
| MIE-324A4 324A4 |
Infrared Emitting Diodes (IRED)
AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-514A4 514A4 |
Infrared Emitting Diodes (IRED)
AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-334A4 334A4 |
Infrared Emitting Diodes (IRED)
AlGaAs/GaAs T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| OP233 OP232 OP231 |
GaAs HERMETIC INFRARED EMITTING DIODES
GaALAs Hermetic Infrared Emitting Diode(铝砷化镓密封红外发光二极工作温度范围-65 125
|
OPTEK Technologies
Optek Technology
|
| SEP8506-001 |
SEP Series GaAs Infrared Emitting Diode, Side-emitting
|
Honeywell Accelerometer...
|
| LED55CB |
GaAs Infrared Emitting Diode; Package: TO-46; No of Pins: 2; Container: Bulk 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| QEE113 |
GAAS INFRARED EMITTING DIODE
|
QT[QT Optoelectronics]
|
| QED234 QED233 |
GAAS INFRARED EMITTING DIODE
|
QT[QT Optoelectronics]
|
| SEP8506 |
GAAS INFRARED EMITTING DIODE
|
Honeywell Solid State Electronics Center
|
| LED55C LED56 LED55B |
GaAs INFRARED EMITTING DIODE
|
FAIRCHILD[Fairchild Semiconductor]
|
| LN66LLN66L LN66L |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
LN66L (LN66(L)) - GaAs Infrared Light Emitting Diode
|
Panasonic
|
| LNA2903L |
GaAs Infrared Light Emitting Diode
|
PANASONIC[Panasonic Semiconductor]
|
