| PART |
Description |
Maker |
| MGP4N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP20N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP7N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGY25N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| F2202S |
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 1.6A I(D)
FET, Enhancement, ID 1.6 A
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER
|
Polyfet RF Devices
List of Unclassifed Manufacturers
|
| L8711PR |
SILICON GATE ENHANCEMENT MODE
|
Polyfet RF Devices
|
| MTY16N80E |
N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MTM8N20 MTM15N45 |
N-Channel Enhancement-Mode Silicon Gate
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
|
| SM401 |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
http://
POLYFET[Polyfet RF Devices]
|
| L2721 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| SR341 SM705 |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
