| PART |
Description |
Maker |
| MHVIC915R2 |
CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier
|
Motorola
|
| MW5IC2030MBR1 MW5IC2030GMBR1 |
RF LDMOS Wideband Integrated Power Amplifiers 1930 MHz - 1990 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
1930–1990 MHz, 30 W, 26 V GSM/GSM EDGE, W–CDMA, PHS RF LDMOS Wideband Integrated Power Amplifier
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Freescale (Motorola)
|
| MHVIC915R2_D MHVIC915 MHVIC915R2 MHVIC915R2/D |
MHVIC915R2 CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier
746-960 MHz RF LDMOS Wideband Integrated Power Amplifier
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| Q68000-A9124 CGY94 |
GaAs MMIC (Power amplifier for GSM or AMPS application Fully integrated 2 stage amplifier Operating voltage range: 2.7 to 6 V)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| RF2173_06 RF2173 RF2173PCBA-41X RF217306 |
3V GSM POWER AMPLIFIER
|
RFMD[RF Micro Devices]
|
| CGY2014 CGY2014ATW |
GSM/DCS/PCS power amplifier
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| MRF5S9080NBR1 |
GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
|
Freescale Semiconductor
|
| MRFIC0970 |
3.2V GSM GaAs Intergrated Power Amplifier 3.2V的集成的GSM砷化镓功率放大器
|
飞思卡尔半导体(中国)有限公司
Freescale Semiconductor, Inc
|
| AP137-501 |
Quad-Band GSM Power Amplifier Module
|
Skyworks Solutions Inc.
|
| SKY77354-13 |
Power Amplifier Module for Quad-Band GSM / GPRS / EDGE
|
Skyworks Solutions Inc.
|
| PF01411 PF01411A |
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
HITACHI[Hitachi Semiconductor]
|
