| PART |
Description |
Maker |
| R6834 |
PHOTOMULTlPLlER TUBE
|
HAMAMATSU[Hamamatsu Corporation]
|
| R2368 |
PHOTOMULTlPLlER TUBE
|
Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
|
| R5108 |
PHOTOMULTlPLlER TUBE
|
HAMAMATSU[Hamamatsu Corporation]
|
| R2693P R2693 |
PHOTOMULTlPLlER TUBES
|
Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
|
| R877-01 R877 |
PHOTOMULTlPLlER TUBES
|
Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
|
| EG3012 |
Power MOS tube / IGBT gate driver chip tube
|
EGmicro
|
| 2SA1432 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS.
|
TOSHIBA
|
| 8040P1S20M050 8040P1S20M020 803000S20M050 803001P0 |
Prog Solid-State Temp Sensor, -40C to 85C, 5-TO-220, TUBE
1.5A Dual MOSFET Drvr, td Match, 0C to 70C, 8-PDIP, TUBE
1.5A DUAL MOSFET DRVR, TD MATCH, -40C to 125C, 8-SOIC 150mil, TUBE
1.5A Sngl 30V MOSFET Drvr, N-Inv, -40C to 85C, 8-CERDIP 300mil, TUBE 铅M12 3WAY 5.0
LEAD M12 4WAY 5.0M 铅M12 4.0
1.5A Dual MOSFET Drvr, -40C to 85C, 8-MSOP, TUBE 铅M12 3WAY 5.0
LEAD M12 4WAY 2.0M 铅M12 400
1.5A Dual MOSFET Drvr, td Match, -40C to 125C, 8-PDIP, TUBE 铅M12 3WAY 200
LEAD M12 4WAY 5.0M 铅M12 45.0
LEAD M12 3WAY 2.0M 铅M12 3WAY 200
|
Molex, Inc.
Ecliptek, Corp.
Samsung Semiconductor Co., Ltd.
THAT, Corp.
TE Connectivity, Ltd.
Rochester Electronics, LLC
|
| 2SA1721 2SA172107 |
High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
|
Toshiba Semiconductor
|
| 2SA138407 2SA1384 |
High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
|
Toshiba Semiconductor
|
| 2SA1721 |
Transistor Silicon PNP Epitaxial Type (PCT process) High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
|
TOSHIBA
|
|
