PART |
Description |
Maker |
HY64UD16322M-DF85E HY64UD16322M-DF85I HY64UD16322M |
Mobile PSRAM - 32Mb 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM x16|3.0(VDD)3.0(VDDQ)V|70/85|Pseudo SRAM - 32M x16 | 3.0(VDD)在3.0(提供VDDQ)V | 70/85 |伪静态存储器- 32M
|
Hynix Semiconductor, Inc.
|
AS6C3216 AS6C3216-55TIN |
32M Bits ( 2Mx16 / 4Mx8 Switchable) LOW POWER CMOS SRAM
|
Alliance Semiconductor Corporation
|
HY64LD16322M-DF85I HY64LD16322M-DF85E |
PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC x16|2.5(VDD)2.5(VDDQ)V|85|Pseudo SRAM - 32M x16 | 2.5(VDD)在2.5(提供VDDQ)V | 85 |伪静态存储器- 32M
|
Hynix Semiconductor, Inc.
|
MC-222253AF9-B85X-BT3 MC-222253A-X |
MCP(32M-bit flash memory 4M-bit Low Power SRAM)
|
NEC
|
KMM372F3200BK3 |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块)
|
Samsung Semiconductor Co., Ltd.
|
IBM11M32735C |
32M x 72 DRAM Module(32M x 72动态RAM模块) 32M × 72配置内存2M × 72配置动态内存模块)
|
International Business Machines, Corp.
|
UPD44321361GF-A75 UPD44321181GF-A75 |
32M-BIT ZEROSB SRAM FLOW THROUGH OPERATION
|
NEC Corp.
|
LRS1383H |
STACKED CHIP 32M (X 16) BOOT BLOCK FLASH AND 8M (X 16) SRAM
|
Sharp Electrionic Components
|
EDI8L24129V-BC EDI8L24129V12BI EDI8L24129V EDI8L24 |
10ns; 3.3V power supply; 128K x 24 SRAM SRAM MCP SDR Connector; No. of Contacts:26; Pitch Spacing:0.8mm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes 128K X 24 SRAM 3.3 VOLT 128K的X 24 SRAM.3 15ns; 3.3V power supply; 128K x 24 SRAM
|
Electronic Theatre Controls, Inc. White Electronic Designs
|
W3H32M72E-667ES W3H32M72E-667ESM W3H32M72E-667ESI |
32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package 32M × 72配置DDR2 SDRAM08 PBGA封装多芯片封
|
Atmel, Corp. Honeywell International, Inc.
|
MB84VD22181EH-90-PBS MB84VD22182EH-90-PBS MB84VD22 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM Stacked MCP (multi-chip package) flash memory & SRAM 32M(x8/x16) flash memory & 4M(x8/x16) static RAM
|
Fujitsu Microelectronics
|