| PART |
Description |
Maker |
| QS3VH2861 QS3VH2861Q8 |
2.5V / 3.3V 10-BIT FLOW-THROUGH PIN OUT, HIGH BANDWIDTH SWITCH .5V / 3.3V0位直通引脚输出，高带宽开
2.5V/3.3V 10-Bit Flow-Through Pin Out, High Bandwidth Switch
|
Electronic Theatre Controls, Inc.
IDT
ETC[ETC]
List of Unclassifed Manufacturers
|
| CY7C1475V33-133BGXI CY7C1475V33-133BGI CY7C1475V33 |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 8.5 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 6.5 ns, PQFP100
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构B>72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM)
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL?/a> Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL垄芒 Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| K7M163625A-QC65 K7N163645-QI25 K7M161825A K7M16182 |
512Kx36 & 1Mx18-Bit Flow Through NtRAM
|
SAMSUNG[Samsung semiconductor]
|
| IDT49C465 IDT49C465A IDT49C465AG IDT49C465AGB IDT4 |
32-BIT FLOW-THRU ERROR DETECTION AND CORRECTION UNIT
|
IDT[Integrated Device Technology]
|
| IDTQS3VH2861 |
QUICKSWITCH? PRODUCTS 2.5V / 3.3V 10-BIT FLOW-THROUGH PIN OUT, HIGH BANDWIDTH SWITCH
|
IDT
|
| MCM69F819TQ11 MCM69F819TQ11R MCM69F819TQ8.5 MCM69F |
256K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
|
MOTOROLA[Motorola, Inc]
|
| TC55V4336FF-83 TC55V4336FF-100 |
131,072-WORD BY 32-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM
|
TOSHIBA
|
| TC55V4376FF-83 |
131,072-WORD BY 36-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM
|
TOSHIBA
|
| QS3126S1G |
QUICKSWITCH? PRODUCTS 2.5V / 3.3V 10-BIT FLOW-THROUGH PIN OUT, HIGH BANDWIDTH BUS SWITCH
|
Integrated Device Technolog...
|
| IDT72T51543 IDT72T51543L5BB IDT72T51543L5BBI IDT72 |
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES (32 QUEUES) 18 BIT WIDE CONFIGURATION
|
IDT[Integrated Device Technology]
|
