| PART |
Description |
Maker |
| MLS9109-00 |
Surface Mount Frequency Synthesizer CDMA 869 -894 MHz
|
MACOM
|
| QPP-005 |
QuikPAC module data. 120W, 869-894 MHz, Class AB power stage.
|
XEMOD
|
| QPP-013 |
QuikPAC module data. 35W, 869-894 MHz, Class AB driver stage.
|
XEMOD
|
| QPP-016 |
QuikPAC module data. 120W, 869-894 MHz, Class AB power stage.
|
XEMOD
|
| PTFA082201E09 PTFA082201F |
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 ??894 MHz
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 ?894 MHz
|
Infineon Technologies AG
|
| PC0882DG-21 |
869 MHz - 894 MHz RF/MICROWAVE 3 PORT CIRCULATOR
DROP-IN CIRCULATOR
|
RF MICRO DEVICES INC
PDI[PREMIER DEVICES, INC.]
|
| PTF10162 |
18 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
|
| PTF10021 |
30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30瓦，1.4-1.6 GHzGOLDMOS场效应晶体管
30 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor
30 Watts, 1.4.6 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
|
| PTF10031 |
50 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 50瓦，1.0 GHzGOLDMOS场效应晶体管
|
Ericsson Microelectronics
|
| PTF10009 |
85 Watts, 1.0 GHz GOLDMOS?/a> Field Effect Transistor
85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
85 Watts, 1.0 GHz GOLDMOS⑩ Field Effect Transistor
85 Watts, 1.0 GHz GOLDMOSField Effect Transistor
85 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
