PART |
Description |
Maker |
HY5DU56822AF HY5DU56422AF-J HY5DU561622AF HY5DU564 |
32M X 8 DDR DRAM, 0.7 ns, PBGA60 DDR SDRAM - 256Mb 64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M 16Mx16|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
|
HYNIX SEMICONDUCTOR INC
|
HY5DU561622DTP HY5DU561622DLTP HY5DU561622DLTP-K H |
DDR SDRAM - 256Mb 256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM)
|
HYNIX[Hynix Semiconductor]
|
PLL103-02 PLL103-02XC-R PLL103-02XI P103-02XC PLL1 |
DDR SDRAM Buffer for Desktop PCs with 4 DDR DIMMS
|
PLL[PhaseLink Corporation]
|
W83196R-718 W83196R-718B W83196G-718 |
VIA BUFFER CHIP (4 X DDR or 2 X DDR 3 X SDRAM)
|
http:// WINBOND[Winbond]
|
KM48L16031BT-GFZ/Y/0 KM416L8031BT-GFZ/Y/0 KM44L160 |
DDR SDRAM Specification Version 0.61 DDR SDRAM的规格版.61 16M X 8 DDR DRAM, 0.8 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
HYMD212G726ALS4-H HYMD212G726ALS4-K HYMD212G726ALS |
128Mx72|2.5V|M/K/H/L|x36|DDR SDRAM - Registered DIMM 1GB 128Mx72 | 2.5V的| /升| x36 | DDR SDRAM内存-内存1GB的注 Registered DDR SDRAM DIMM 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
Hynix Semiconductor HYNIX SEMICONDUCTOR INC
|
M470L6423CK0 |
512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
M368L3313DTL-CA2 M368L3313DTL-CB3 M368L3313DTL-CB0 |
256MB DDR SDRAM MODULE (32Mx64(16Mx64*2 bank) based on 16Mx8 DDR SDRAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
M383L2828BT1 |
DDR SDRAM 184pin DIMM 128Mx72 DDR SDRAM Data Sheet
|
Samsung Electronic
|
W942508CH W942508CH-75 W942508CH-5 W942508CH-6 W94 |
DDR SDRAM (Double Data Rate) 8M x 4 BANKS x 8 BIT DDR SDRAM
|
Winbond Electronics WINBOND[Winbond]
|